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Author |
Ekström, H.; Kroug, M.; Belitsky, V.; Kollberg, E.; Olsson, H.; Goltsman, G.; Gershenzon, E.; Yagoubov, P.; Voronov, B.; Yngvesson, S. |
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Title |
Hot electron mixers for THz applications |
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Conference Article |
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Year |
1996 |
Publication  |
Proc. 30th ESLAB |
Abbreviated Journal |
Proc. 30th ESLAB |
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Volume |
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Pages |
207-210 |
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Keywords |
NbN HEB mixers |
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Abstract |
We have measured the noise performance of 35 A thin NbN HEB devices integrated with spiral antennas on antireflection coated silicon substrate lenses at 620 GHz. From the noise measurements we have determined a total conversion gain of the receiver of—16 dB, and an intrinsic conversion of about-10 dB. The IF bandwidth of the 35 A thick NbN devices is at least 3 GHz. The DSB receiver noise temperature is less than 1450 K. Without mismatch losses, which is possible to obtain with a shorter device, and with reduced loss from the beamsplitter, we expect to achieve a DSB receiver noise temperature of less ‘than 700 K. |
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Noordwijk, Netherlands |
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Rolfe, E. J.; Pilbratt, G. |
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Submillimetre and Far-Infrared Space Instrumentation |
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no |
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Call Number |
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Serial |
1606 |
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Author |
van de Stadt, H. |
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Title |
An improved 1 THz waveguide mixer |
Type |
Conference Article |
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Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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Pages |
536 |
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Charlottesville, Virginia, USA |
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Probably other authors exist. |
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no |
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263 |
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Author |
Belitsky, V. Yu.; Kollberg, E. L. |
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Title |
Tuning circuit for NbN SIS mixer |
Type |
Conference Article |
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Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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Pages |
234 |
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Charlottesville, Virginia, USA |
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no |
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264 |
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Author |
Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
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Title |
The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
Type |
Conference Article |
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Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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Pages |
290-302 |
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Keywords |
NbN HEB mixers, fabrication process |
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Abstract |
We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Charlottesville, Virginia, USA |
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no |
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266 |
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Author |
Ellison, B. N.; Maddison, B. J.; Matheson, D. N.; Oldfield, M. L.; Marazita, S.; Crowe, T. W.; Maaskant, P.; Kelly, W. M. |
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Title |
First results for a 2.5 THz Schottky diode waveguide mixer |
Type |
Conference Article |
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Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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Volume |
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Pages |
494 |
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Place of Publication |
Charlottesville, Virginia, USA |
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265 |
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