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Author Kerr, A. R.; Feldman, M. J.; Pan, S.-K.
Title Receiver noise temperature, the quantum noise limit, and zero–point fluctuations Type Conference Article
Year 1997 Publication Proc. 8th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages 101-111
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Notes Approved no
Call Number (up) Serial 277
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Author de Lange, G.; Hu, Q.; Huang, H.; Lichtenberger, A. W.
Title Development of a 170-210 GHz 3×3 micromachined SIS imaging array Type Conference Article
Year 1997 Publication Proc. 8th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages 518
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Notes Approved no
Call Number (up) Serial 278
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Author
Title ГОСТ Р 50995.0.1-96. Технологическое обеспечение создания продукции. Основные положения Type Book Whole
Year 1997 Publication Abbreviated Journal
Volume Issue Pages
Keywords gost, detproj
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Notes Approved no
Call Number (up) Serial 873
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Author Pothier, H.; Guéron, S.; Birge, Norman O.; Esteve, D.; Devoret, M. H.
Title Energy distribution function of quasiparticles in mesoscopic wires Type Journal Article
Year 1997 Publication Phys. Rev. Lett. Abbreviated Journal
Volume 79 Issue 18 Pages 3490-3493
Keywords tunnel probe, metallic nanowire, diffusive wire, diffusive nanowire
Abstract We have measured with a tunnel probe the energy distribution function of Landau quasiparticles in metallic diffusive wires connected to two reservoir electrodes, with an applied bias voltage. The distribution function in the middle of a 1.5-μm-long wire resembles the half sum of the Fermi distributions of the reservoirs. The distribution functions in 5-μm-long wires are more rounded, due to interactions between quasiparticles during the longer diffusion time across the wire. From the scaling of the data with the bias voltage, we find that the scattering rate between two quasiparticles varies as <c9><203a>–2, where <c9><203a> is the energy transferred.
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Notes Approved no
Call Number (up) Serial 921
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Author Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E.
Title Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers Type Conference Article
Year 1997 Publication Proc. 27th Eur. Microwave Conf. Abbreviated Journal
Volume 2 Issue Pages 972-977
Keywords HEB mixer, fabrication process
Abstract The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
Address Jerusalem, Israel
Corporate Author Thesis
Publisher IEEE Place of Publication Editor
Language Summary Language Original Title
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Area Expedition Conference 27th Eur. Microwave Conf.
Notes Approved no
Call Number (up) Serial 1075
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