| Records |
| Author |
Tong, C. Y. E.; Chen, L.; Blundell, R. |
| Title |
Theory of distributed mixing and amplification in a superconductingquasi-particle nonlinear transmission line |
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Journal Article |
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1997 |
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IEEE Trans. Microw. Theory Techn. |
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45 |
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7 |
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1086-1092 |
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274 |
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Kerr, A. R.; Feldman, M. J.; Pan, S.-K. |
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Receiver noise temperature, the quantum noise limit, and zero–point fluctuations |
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1997 |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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101-111 |
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277 |
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de Lange, G.; Hu, Q.; Huang, H.; Lichtenberger, A. W. |
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Development of a 170-210 GHz 3×3 micromachined SIS imaging array |
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Conference Article |
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1997 |
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Proc. 8th Int. Symp. Space Terahertz Technol. |
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518 |
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278 |
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Ptitsina N. G.; Chulkova G. M.; Il'in K. S.; Sergeev A. V.; Pochinkov F. S.; Gershenzon E. M. |
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Superconductivity has been found in a number of new compounds between the non-superconducting transition elements and nonmetals such as Si, Ge, and Te. These findings have suggested possible criteria for superconductivity in both elements and compounds. |
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Journal Article |
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1997 |
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Phys. Rev. B |
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Phys. Rev. B |
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56 |
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16 |
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The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path L=1.5– 10 nm has been measured at 4.2–300 K. The resistance of all the films contains a T^2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference „M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 ~1987! @Sov. Phys. JETP 65, 1291 ~1987!#…, we obtain constants of nteraction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electronphonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. |
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RPLAB @ phisix @ |
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988 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
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Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range |
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Conference Article |
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1997 |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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Proc. 4-th Int. Semicond. Device Research Symp. |
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55-58 |
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2DEG, AlGaAs/GaAs heterostructures |
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1602 |
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