| Records |
| Author |
Kroug, M.; Yagoubov, P.; Gol'tsman, G.; Kollberg, E. |
| Title |
NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies |
Type |
Conference Article |
| Year |
1997 |
Publication  |
Inst. Phys. Conf. Ser. |
Abbreviated Journal |
Inst. Phys. Conf. Ser. |
| Volume |
1 |
Issue |
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Pages |
405-408 |
| Keywords |
NbN HEB mixers |
| Abstract |
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| Address |
Veldhoven |
| Corporate Author |
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Thesis |
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| Publisher |
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Place of Publication |
Bristol |
Editor |
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Edition |
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| ISSN |
0951-3248 |
ISBN |
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Conference |
3rd Eur. Conf. on Applied Superconductivity |
| Notes |
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Approved |
no |
| Call Number |
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Serial |
1600 |
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| Author |
Tong, C. Y. E.; Chen, L.; Blundell, R. |
| Title |
Theory of distributed mixing and amplification in a superconductingquasi-particle nonlinear transmission line |
Type |
Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Microw. Theory Techn. |
Abbreviated Journal |
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| Volume |
45 |
Issue |
7 |
Pages |
1086-1092 |
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Approved |
no |
| Call Number |
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Serial |
274 |
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| Author |
Gousev, Y. P.; Semenov, A. D.; Goghidze, I. G.; Pechen, E. V.; Varlashkin, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F. |
| Title |
Current dependent noise in a YBa2Cu3O7-δ hot-electron bolometer |
Type |
Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3556-3559 |
| Keywords |
YBCO HTS HEB mixers |
| Abstract |
We investigated the output noise of a YBa2Cu3O7-δ (YBCO) superconducting hot-electron bolometer (HEB) in a large frequency range (10 kHz to 8 GHz); the bolometer either consisted of a structured 50 nm thick YBCO film on LaAlO/sub 3/ or a 30 nm thick film on a MgO substrate. We found that flicker noise dominated at low frequencies (below 1 MHz), while at higher frequencies Johnson noise and a current dependent noise were the main noise sources. |
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Series Issue |
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Edition |
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| ISSN |
1051-8223 |
ISBN |
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Conference |
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| Notes |
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Approved |
no |
| Call Number |
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Serial |
1592 |
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| Author |
Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R. |
| Title |
Noise characteristics of a NbN hot-electron mixer at 2.5 THz |
Type |
Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3572-3575 |
| Keywords |
NbN HEB mixers |
| Abstract |
The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation. |
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Series Title |
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Series Issue |
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Edition |
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| ISSN |
1051-8223 |
ISBN |
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Medium |
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| Area |
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Expedition |
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Conference |
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| Notes |
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Approved |
no |
| Call Number |
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Serial |
1594 |
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| Author |
Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. |
| Title |
2.5 THz NbN hot electron mixer with integrated tapered slot antenna |
Type |
Journal Article |
| Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
7 |
Issue |
2 |
Pages |
3548-3551 |
| Keywords |
NbN HEB mixers |
| Abstract |
A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. |
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Edition |
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| ISSN |
1051-8223 |
ISBN |
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| Notes |
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Approved |
no |
| Call Number |
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Serial |
1595 |
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