| Records |
| Author |
Burke, P. J.; Schoelkopf, R. J.; Prober, D. E.; Skalare, A.; Karasik, B. S.; Gaidis, M. C.; McGrath, W. R.; Bumble, B.; LeDuc, H. G. |
| Title |
Mixing and noise in diffusion and phonon cooled superconducting hot-electron bolometers |
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Journal Article |
| Year |
1999 |
Publication |
J. Appl. Phys. |
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| Volume |
85 |
Issue |
3 |
Pages |
1644-1653 |
| Keywords |
HEB, mixer |
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0021-8979 |
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556 |
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| Author |
Килин, С. Я. |
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Квантовая информация |
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Journal Article |
| Year |
1999 |
Publication |
Успехи физических наук |
Abbreviated Journal |
УФН |
| Volume |
169 |
Issue |
5 |
Pages |
507-527 |
| Keywords |
quantum cryptography; QKD, BB84 |
| Abstract |
Новое направление физики – квантовая информация – возникло на стыке квантовой механики, оптики, теории относительности и программирования, дискретной математики, лазерной физики и спектроскопии и включает в себя вопросы квантовых вычислений, квантовых компьютеров, квантовой телепортации и квантовой криптографии, проблемы декогеренции и спектроскопии одиночных молекул и примесных центров. Сообщается о некоторых новых результатах в этой быстро развивающейся области исследований. |
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RPLAB @ gujma @ |
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732 |
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| Author |
Ynvesson, K. Sigfrid; Kollberg, Erik L. |
| Title |
Optimum receiver noise temperature for NbN HEB mixers according to standard model |
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Conference Article |
| Year |
1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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566-582 |
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HEB mixer model, standard model, electro-thermal feedback, self-heating parameter, heating efficiency |
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895 |
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Gupta, D.; Kadin, A. M. |
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Single-photon-counting hotspot detector with integrated RSFQ readout electronics |
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Journal Article |
| Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
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9 |
Issue |
2 |
Pages |
4487-4490 |
| Keywords |
RSFQ, SSPD, SNSPD |
| Abstract |
Absorption of an infrared photon in an ultrathin film (such as 10-nm NbN) creates a localized nonequilibrium hotspot on the submicron length scale and sub-ns time scale. If a strip /spl sim/1 /spl mu/m wide is biased in the middle of the superconducting transition, this hotspot will lead to a resistance pulse with amplitude proportional to the energy of the incident photon. This resistance pulse, in turn, can be converted to a current pulse and inductively coupled to a SQUID amplifier with a digitized output, operating at 4 K or above. A preliminary design analysis indicates that this data can be processed on-chip, using ultrafast RSFQ digital circuits, to obtain a sensitive infrared detector for wavelengths up to 10 /spl mu/m and beyond, with bandwidth of 1 GHz, that counts individual photons and measures their energy with 25 meV resolution. This proposed device combines the speed of a hot-electron bolometer with the single-photon-counting ability of a transition-edge microcalorimeter, to obtain an infrared detector with sensitivity, speed, and spectral selectivity that are unmatched by any alternative technology. |
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1080 |
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Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
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Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
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Journal Article |
| Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
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9 |
Issue |
2 |
Pages |
3216-3219 |
| Keywords |
RSFQ, NbN, SIS |
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A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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