| Records |
| Author |
Il'in, K. S.; Lindgren, M.; Currie, M. A.; Semenov, D.; Gol'tsman, G. N.; Sobolewski, Roman; Cherednichenko, S. I.; Gershenzon, E. M. |
| Title |
Picosecond hot-electron energy relaxation in NbN superconducting photodetectors |
Type |
Journal Article |
| Year |
2000 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
76 |
Issue |
19 |
Pages |
2752-2754 |
| Keywords |
NbN HEB detectors, two-temperature model, IF bandwidth |
| Abstract |
We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect. |
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0003-6951 |
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856 |
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ГОСТ 2.711-82. ЕСКД. Схема деления изделия на составные части |
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Book Whole |
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2000 |
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gost, detproj |
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Leisawitz, David T.; Danchi, William C.; Dipirro, Michael J.; Feinberg, Lee D.; Gezari, Daniel Y.; Hagopian, Mike; Langer, William D.; Mather, John C.; Moseley, Jr. Samuel H.; Shao, Michael; Silverberg, Robert F.; Staguhn, Johannes G.; Swain, Mark R.; Yorke, Harold W.; Zhang, Xiaolei |
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Scientific motivation and technology requirements for the SPIRIT and SPECS far-infrared/submillimeter space interferometers |
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Conference Article |
| Year |
2000 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
4013 |
Issue |
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Pages |
36-46 |
| Keywords |
HEB applications |
| Abstract |
Far infrared interferometers in space would enable extraordinary measurements of the early universe, the formation of galaxies, stars, and planets, and would have great discovery potential. Since half the luminosity of the universe and 98% of the photons released since the Big Bang are now observable at far IR wavelengths (40 – 500 micrometers ), and the Earth's atmosphere prevents sensitive observations from the ground, this is one of the last unexplored frontiers of space astronomy. We present the engineering and technology requirements that stem from a set of compelling scientific goals and discuss possible configurations for two proposed NASA missions, the Space Infrared Interferometric Telescope and the Submillimeter Probe of the Evolution of Cosmic Structure. |
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909 |
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Floet D. W.; Gao J. R.; Klapwijk T. M.; de Korte P. A. J. |
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Bias Dependence of the Thermal Time Constant in Nb Superconducting Diffusion-Cooled HEB Mixers |
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Journal Article |
| Year |
2000 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
77 |
Issue |
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Pages |
1719 |
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We present an experimental study of the intermediate frequency bandwidth of a Nb diffusion-cooled hot-electron bolometer mixer for different bias voltages. The measurements show that the bandwidth increases with increasing voltage. Analysis of the data reveals that this effect is mainly caused by a decrease of the intrinsic thermal time of the mixer and that the effect of electrothermal feedback through the intermediate frequency circuit is small. The results are understood using a qualitative model, which takes into account the different effective diffusion constants in the normal and superconducting domains. |
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RPLAB @ atomics90 @ |
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971 |
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Manus, M. K. Mc; Kash, J. A.; Steen, S. E.; Polonsky, S.; Tsang, J.C.; Knebel, D. R.; Huott, W. |
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PICA: Backside failure analysis of CMOS circuits using picosecond imaging circuit analysis |
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Journal Article |
| Year |
2000 |
Publication |
Microelectronics Reliability |
Abbreviated Journal |
Microelectronics Reliability |
| Volume |
40 |
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1353-1358 |
| Keywords |
SSPD, CMOS testing |
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Normal operation of complementary metal-oxide semiconductor (CMOS) devices entails the emission of picosecond pulses of light, which can be used to diagnose circuit problems. The pulses that are observed from submicron sized field effect transistors (FETs) are synchronous with logic state switching. Picosecond Imaging Circuit Analysis (PICA), a new optical imaging technique combining imaging with timing, spatially resolves individual devices at the 0.5 micron level and switching events on a 10 picosecond timescale. PICA is used here for the diagnostics of failures on two VLSI microprocessors. |
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1054 |
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