| Records |
Author  |
Kroug, M.; Cherednichenko, S.; Choumas, M.; Merkel, H.; Kollberg, E.; Hübers, H.-W.; Richter, H.; Loudkov, D.; Voronov, B.; Gol'Tsman, G. |
| Title |
HEB quasi-optical heterodyne receiver for THz frequencies |
Type |
Conference Article |
| Year |
2001 |
Publication |
Proc. 12th Int. Symp. Space Terahertz Technol. |
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Pages |
244-252 |
| Keywords |
HEB mixer, NbN, MgO, conversion gain bandwidth, noise temperature |
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San Diego, CA, USA |
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319 |
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Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H. |
| Title |
NbN hot electron bolometric mixers for terahertz receivers |
Type |
Journal Article |
| Year |
2001 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
11 |
Issue |
1 |
Pages |
962-965 |
| Keywords |
NbN HEB mixers |
| Abstract |
Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two. |
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312 |
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Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
| Title |
Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
Type |
Journal Article |
| Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
| Volume |
73 |
Issue |
1 |
Pages |
44-47 |
| Keywords |
uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
| Abstract |
The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
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0021-3640 |
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1752 |
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Merkel, H. F.; Khosropanah, P.; Sigfrid Yngvesson, K.; Cherednichenko, S.; Kroug, M.; Adam, A.; Kollberg, E. |
| Title |
An active zone small signal model for hot-electron bolometric mixers |
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Conference Article |
| Year |
2001 |
Publication |
Proc. 12th Int. Symp. Space Terahertz Technol. |
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55 |
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San Diego, CA, USA |
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RPLAB @ s @ losses_in_contacts_merkel |
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320 |
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Murk, A.; Kämpfer, N.; Wylde, R.; Inatani, J.; Manabe, T.; Seta, M. |
| Title |
Characterization of various quasi-optical components for the submillimeter limb-sounder SMILES |
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Conference Article |
| Year |
2001 |
Publication |
Proc. 12th Int. Symp. Space Terahertz Technol. |
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Pages |
426-435 |
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limb-sounder |
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530 |
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