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Author Kasparek, W; Fernandez, A.; Hollmann, F; Wacker, R.
Title Measurements of ohmic losses of metallic reflectors at 140 GHz using a 3-mirror resonator technique Type Journal Article
Year 2001 Publication (up) Int. J. Infrared and Millimeter Waves Abbreviated Journal
Volume 22 Issue 11 Pages 1695-1707
Keywords mirror, reflection index, emissivity, Fabry-Perot interferometer, subterahertz, subTHz
Abstract The reflectivity of metallic mirrors in the millimeter wave region does not only depend on the material, but also on the structure and roughness of the surface. We have performed measurements of the reflectivity of various plane and grooved metallic and graphite samples at 140 GHz. The technique is based on the comparison of the quality factor of a 2-mirror reference resonator with the quality factor of a 3-mirror resonator which has identical dimensions and includes the mirror to be tested. After a brief presentation of the theory, the set-up is described and the reflection loss for various aluminium and copper mirrors as well as vacuum compatible materials for applications in thermonuclear fusion experiments are presented and discussed.
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Call Number Serial 581
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Author Van Rudd, J.; Johnson, Jon L.; Mittleman, Daniel M.
Title Cross-polarized angular emission patterns from lens-coupled terahertz antennas Type Journal Article
Year 2001 Publication (up) J. Opt. Soc. Am. B Abbreviated Journal
Volume 18 Issue 10 Pages 1524
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ISSN 0740-3224 ISBN Medium
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Notes Approved no
Call Number Serial 475
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Author Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G.
Title New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect Type Journal Article
Year 2001 Publication (up) J. Vac. Sci. Technol. B Abbreviated Journal J. Vac. Sci. Technol. B
Volume 19 Issue 6 Pages 2766-2769
Keywords NbN SSPD, SNSPD
Abstract A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics.
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ISSN 0734211X ISBN Medium
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Notes Approved no
Call Number Serial 1542
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Author Gol’tsman, G. N.; Smirnov, K. V.
Title Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures Type Journal Article
Year 2001 Publication (up) Jetp Lett. Abbreviated Journal Jetp Lett.
Volume 74 Issue 9 Pages 474-479
Keywords 2DEG, AlGaAs/GaAs heterostructures
Abstract Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered.
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ISSN 0021-3640 ISBN Medium
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Notes По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах Approved no
Call Number Serial 1541
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Author Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M.
Title Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon Type Journal Article
Year 2001 Publication (up) Jetp Lett. Abbreviated Journal Jetp Lett.
Volume 73 Issue 1 Pages 44-47
Keywords uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field
Abstract The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
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ISSN 0021-3640 ISBN Medium
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Notes Approved no
Call Number Serial 1752
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