| Records |
| Author |
Skalare, A.; McGrath, William R.; Echternach, P. M.; Leduc, H. G.; Siddiqi, I.; Verevkin, A.; Prober, D. E. |
| Title |
Aluminum hot-electron bolometer mixers at submillimeter wavelengths |
Type |
Journal Article |
| Year |
2001 |
Publication |
IEEE Trans. Appl. Supercond. |
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| Volume |
11 |
Issue |
1 |
Pages |
641-644 |
| Keywords |
Al HEB mixer, contacts, interface, in situ, in-situ, Aluminium HEB mixer |
| Abstract |
Diffusion-cooled aluminum hot-electron bolometer (HEB) mixers are of interest for low-noise high resolution THz-frequency spectroscopy within astrophysics. Al HEB mixers offer operation with an order of magnitude less local oscillator power, higher intermediate frequency bandwidth and potentially lower noise than competing devices made from other materials. We report on mixer experiments at 618 GHz with devices fabricated from films with sheet resistances in the range from about 55 Ω down to about 9 Ω per square. Intermediate frequency bandwidths of up to 3 GHz were measured (1 μm long device), with absorbed local oscillator power levels of 0.5 to 6 nW and mixer conversion up to -21.5 dB. High input coupling efficiency implies that the electrons in the device are able to thermalize before escaping from the device. It was found that the long coherence length complicates mixer operations due to the proximity of the contact pads. Also, saturation at the IF frequency may be a concern for this type of device, and warrants further studies. |
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1051-8223 |
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ref919426b |
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1061 |
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Verevkin, A.; Xu, Y.; Zheng, X.; Williams, C.; Sobolewski, Roman; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol’tsman, G. N. |
| Title |
Superconducting NbN-based ultrafast hot-electron single-photon detector for infrared range |
Type |
Conference Article |
| Year |
2001 |
Publication |
Proc. 12th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 12th Int. Symp. Space Terahertz Technol. |
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Pages |
462-468 |
| Keywords |
NbN SSPD, SNSPD |
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1539 |
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Gol'tsman, Gregory; Semenov, Alexei; Smirnov, Konstantin; Voronov, Boris |
| Title |
Background limited quantum superconducting detector for submillimeter wavelengths |
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Conference Article |
| Year |
2001 |
Publication |
Proc. 12th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 12th Int. Symp. Space Terahertz Technol. |
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469-475 |
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Ti SQD, SQUID readout |
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1540 |
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Gol’tsman, G. N.; Smirnov, K. V. |
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Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
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Journal Article |
| Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
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74 |
Issue |
9 |
Pages |
474-479 |
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2DEG, AlGaAs/GaAs heterostructures |
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Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
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0021-3640 |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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1541 |
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Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G. |
| Title |
New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect |
Type |
Journal Article |
| Year |
2001 |
Publication |
J. Vac. Sci. Technol. B |
Abbreviated Journal |
J. Vac. Sci. Technol. B |
| Volume |
19 |
Issue |
6 |
Pages |
2766-2769 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics. |
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0734211X |
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no |
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1542 |
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