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Author Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G. url  doi
openurl 
  Title New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect Type Journal Article
  Year 2001 Publication J. Vac. Sci. Technol. B Abbreviated Journal J. Vac. Sci. Technol. B  
  Volume 19 Issue 6 Pages 2766-2769  
  Keywords NbN SSPD, SNSPD  
  Abstract A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics.  
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  ISSN 0734211X ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1542  
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Author Semenov, A.; Goltsman, G.; Korneev, A. url  doi
openurl 
  Title Quantum detection by current carrying superconducting film Type Journal Article
  Year 2001 Publication Phys. C: Supercond. Abbreviated Journal Phys. C: Supercond.  
  Volume 351 Issue 4 Pages 349-356  
  Keywords quantum detection, phase slip centers, quasiparticle diffusion  
  Abstract We describe a novel quantum detection mechanism in the superconducting film carrying supercurrent. The mechanism incorporates growing normal domain and breaking of superconductivity by the bias current. A single photon absorbed in the film creates transient normal spot that causes redistribution of the current and, consequently, increase of the current density in superconducting areas. When the current density exceeds the critical value, the film switches into resistive state and generates the voltage pulse. Analysis shows that a submicron-wide film of conventional low temperature superconductor operated in liquid helium may detect single far-infrared photon. The amplitude and duration of the voltage pulse are in the millivolt and picosecond range, respectively. The quantitative model is presented that allows simulation of the detector utilizing this detection mechanism.  
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  ISSN 0921-4534 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 507  
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Author Gol’tsman, G. N.; Smirnov, K. V. url  doi
openurl 
  Title Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures Type Journal Article
  Year 2001 Publication Jetp Lett. Abbreviated Journal Jetp Lett.  
  Volume 74 Issue 9 Pages 474-479  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered.  
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  ISSN 0021-3640 ISBN Medium  
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  Notes По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах Approved no  
  Call Number Serial 1541  
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Author Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. url  doi
openurl 
  Title Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon Type Journal Article
  Year 2001 Publication Jetp Lett. Abbreviated Journal Jetp Lett.  
  Volume 73 Issue 1 Pages 44-47  
  Keywords uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field  
  Abstract The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.  
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  ISSN 0021-3640 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1752  
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Author Ganzevles, W. F. M.; Gao, J. R.; de Korte, P. A. J.; Klapwijk, T. M. url  doi
openurl 
  Title Direct response of microstrip line coupled Nb THz hot-electron bolometer mixers Type Journal Article
  Year 2001 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 79 Issue 15 Pages 2483-2485  
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  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 311  
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