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Гольцман, Г.Н.; Лудков, Д.Н. |
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Title |
Сверхпроводниковые смесители на горячих электронах терагерцового диапазона и их применение в радиоастрономии |
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Journal Article |
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Year |
2003 |
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Изв. высших учебных заведений. Радиофизика |
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46 |
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8/9 |
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HEB, mixers |
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russian |
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RPLAB @ s @ |
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473 |
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Title |
InSb detectors technical data sheet |
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Miscellaneous |
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2003 |
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InSb, detector |
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476 |
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Author |
Su, M. Y.; Carter, S. G.; Sherwin, M. S. |
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Title |
Strong-field terahertz optical mixing in excitons |
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Journal Article |
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2003 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
67 |
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12 |
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optical mixing |
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1098-0121 |
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500 |
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Zwiller, V.; Aichele, T.; Seifert, W.; Persson, J.; Benson, O. |
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Title |
Generating visible single photons on demand with single InP quantum dots |
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Journal Article |
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Year |
2003 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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82 |
Issue |
10 |
Pages |
1509-1511 |
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single photon, quantum dot, InP |
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0003-6951 |
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503 |
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Author |
Finkel, Matvey; Vachtomin, Yuriy; Antipov, Sereey; Drakinski, Vladimir; Kaurova, Natalia; Voronov, Boris; Goltsman, Greeory |
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Title |
Gain bandwidth and noise temperature of NbTiN HEB mixer |
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Conference Article |
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Year |
2003 |
Publication |
Proc. 14th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 14th Int. Symp. Space Terahertz Technol. |
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276-285 |
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NbTiN HEB mixer |
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We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz. |
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1500 |
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