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InSb detectors technical data sheet |
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Miscellaneous |
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2003 |
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InSb, detector |
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no |
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476 |
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Author |
Su, M. Y.; Carter, S. G.; Sherwin, M. S. |
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Title |
Strong-field terahertz optical mixing in excitons |
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Journal Article |
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2003 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
67 |
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12 |
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Keywords |
optical mixing |
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1098-0121 |
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no |
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500 |
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Author |
Zwiller, V.; Aichele, T.; Seifert, W.; Persson, J.; Benson, O. |
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Title |
Generating visible single photons on demand with single InP quantum dots |
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Journal Article |
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Year |
2003 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
82 |
Issue |
10 |
Pages |
1509-1511 |
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Keywords |
single photon, quantum dot, InP |
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0003-6951 |
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no |
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503 |
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Author |
Finkel, Matvey; Vachtomin, Yuriy; Antipov, Sereey; Drakinski, Vladimir; Kaurova, Natalia; Voronov, Boris; Goltsman, Greeory |
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Title |
Gain bandwidth and noise temperature of NbTiN HEB mixer |
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Conference Article |
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Year |
2003 |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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276-285 |
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NbTiN HEB mixer |
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We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz. |
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1500 |
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Author |
Semenov, A.; Engel, A.; Il'in, K.; Gol'tsman, G.; Siegel, M.; Hübers, H.-W. |
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Title |
Ultimate performance of a superconducting quantum detector |
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Journal Article |
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Year |
2003 |
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Eur. Phys. J. Appl. Phys. |
Abbreviated Journal |
Eur. Phys. J. Appl. Phys. |
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21 |
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3 |
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171-178 |
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NbN SSPD, SNSPD |
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Abstract |
We analyze the ultimate performance of a superconducting quantum detector in order to meet requirements for applications in near-infrared astronomy and X-ray spectroscopy. The detector exploits a combined detection mechanism, in which avalanche quasiparticle multiplication and the supercurrent jointly produce a voltage response to a single absorbed photon via successive formation of a photon-induced and a current-induced normal hotspot in a narrow superconducting strip. The response time of the detector should increase with the photon energy providing energy resolution. Depending on the superconducting material and operation conditions, the cut-off wavelength for the single-photon detection regime varies from infrared waves to visible light. We simulated the performance of the background-limited infrared direct detector and X-ray photon counter utilizing the above mechanism. Low dark count rate and intrinsic low-frequency cut-off allow for realizing a background limited noise equivalent power of 10−20 W Hz−1/2 for a far-infrared direct detector exposed to 4-K background radiation. At low temperatures, the intrinsic response time of the counter is rather determined by diffusion of nonequilibrium electrons than by the rate of energy transfer to phonons. Therefore, thermal fluctuations do not hamper energy resolution of the X-ray photon counter that should be better than 10−3 for 6-keV photons. Comparison of new data obtained with a Nb based detector and previously reported results on NbN quantum detectors support our estimates of ultimate detector performance. |
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1286-0042 |
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534 |
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