| Records |
| Author |
Goltsman, G.; Korneev, A.; Izbenko, V.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, R. |
Title  |
Nano-structured superconducting single-photon detectors |
Type |
Journal Article |
| Year |
2004 |
Publication |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
Abbreviated Journal |
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| Volume |
520 |
Issue |
1-3 |
Pages |
527-529 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications. |
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0168-9002 |
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1495 |
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Maslennikov, S.; Vachtomin, Yu.; Antipov, S.; Smirnov, K.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G. |
| Title |
NbN HEB mixers for frequencies of 2.5 and 3.8 THz |
Type |
Conference Article |
| Year |
2004 |
Publication |
Proc. Tenth All-Russian sceintific conference of student-physicists and young sceintists (VNKSF-10) |
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Moscow |
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no |
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RPLAB @ s @ qoheb_vnksf10_2004 |
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349 |
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Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. |
| Title |
NbN hot electron bolometer mixers with superior performance for space applications |
Type |
Conference Article |
| Year |
2004 |
Publication |
Proc. Int. workshop on low temp. electronics |
Abbreviated Journal |
Proc. Int. workshop on low temp. electronics |
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Pages |
11-17 |
| Keywords |
NbN HEB mixers, applications |
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Noordwijk |
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Armandillo, E.; Leone, B. |
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International workshop on low temperature electronics- WOLTE 6 - Noordwijk |
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no |
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1496 |
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Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gol'tsman, G. N.; Verevkin, M.; Sobolewski, R. |
| Title |
NbN superconducting single-photon detectors coupled with a communication fiber |
Type |
Miscellaneous |
| Year |
2004 |
Publication |
INIS |
Abbreviated Journal |
INIS |
| Volume |
37 |
Issue |
2 |
Pages |
1-2 |
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NbN SSPD, SNSPD |
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Stare Jablonki, Poland |
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8-th Electron Technology Conference ELTE |
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no |
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1486 |
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| Author |
Siddiqi, I.; Prober, D. E. |
| Title |
Nb–Au bilayer hot-electron bolometers for low-noise THz heterodyne detection |
Type |
Journal Article |
| Year |
2004 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
84 |
Issue |
8 |
Pages |
1404 |
| Keywords |
HEB, mixers, dynamic range, saturation, LO power, local oscillator power, Nb |
| Abstract |
The sensitivity of present Nb diffusion-cooled hot-electron bolometer (HEB) mixers is not quantum limited, and can be improved by reducing the superconducting transition temperature TC. Lowering TC reduces thermal fluctuations, resulting in a decrease of the mixer noise temperature TM. However, lower TC mixers have reduced dynamic range and saturate more easily due to background noise. We present 30 GHz microwave measurements on a bilayer HEB system, Nb–Au, in which TC can be tuned with Au layer thickness to obtain the maximum sensitivity for a given noise background. These measurements are intended as a guide for the optimization of THz mixers. Using a Nb–Au mixer with TC = 1.6 K, we obtain TM = 50 K with 2 nW of local oscillator (LO) power. Good mixer performance is observed over a wide range of LO power and bias voltage and such a device should not exhibit saturation in a THz receiver. |
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0003-6951 |
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no |
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571 |
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