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Loudkov, D.; Tong, C.-Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol’tsman, G. |
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An investigation of the performance of the superconducting HEB mixer as a function of its RF embedding impedance |
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2005 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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15 |
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2 |
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472-475 |
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waveguide NbN HEB mixers |
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We have conducted an investigation of the optimal embedding impedance for a waveguide superconducting hot-electron bolometric (HEB) mixer. Three mixer chip designs for 800 GHz, offering nominal embedding resistances of 70 /spl Omega/, 35 /spl Omega/, and 15 /spl Omega/, have been developed. We used both High Frequency Structure Simulator (HFSS) software and scale model impedance measurements in the design process. We subsequently fabricated HEB mixers to these designs using 3-4 nm thick NbN thin film. Receiver noise temperature measurements and Fourier Transform Spectrometer (FTS) scans were performed to determine the optimal combination of embedding impedance and normal-state resistance for a 50 Ohm IF load impedance. A receiver noise temperature of 440 K was measured at a local oscillator frequency 850 GHz for a mixer with normal state resistance of 62 /spl Omega/ incorporated into a circuit offering a nominal embedding impedance of 70 /spl Omega/. We conclude from our data that, for low noise operation, the normal state resistance of the HEB mixer element should be close to the embedding impedance of the mixer mount. |
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1439677 |
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1464 |
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Loudkov, D.; Tong, C.-Y.E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol’tsman, G. |
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Title |
An investigation of the performance of the waveguide superconducting HEB mixer at different RF embedding impedances |
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Conference Article |
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2005 |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
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226-229 |
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waveguide NbN HEB mixers |
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Abstract |
We have conducted an investigation of the performance of superconducting hot-electron bolometric (HEB) mixer at 800 GHz as a function of the embedding impedance of the waveguide embedding circuit. Using a single half-height mixer block, we have developed three different mixer chip configurations, offering nominal embedding resistances of 70, 35, and 15 Ohms. Both the High Frequency Structure Simulator (HFSS) software and scaled model impedance measurements were employed in the design process. Two batches of HEB mixers were fabricated to these designs using 3-4 nm thick NbN thin film. The mixers were characterized through receiver noise temperature measurements and Fourier Transform Spectrometer (FTS) scans. Briefly, a minimum receiver noise temperature of 440 K was measured at a local oscillator frequency 850 GHz for a mixer of normal state resistance 62 Ohms incorporated into a circuit offering a nominal embedding impedance of 70 Ohms. We conclude from our data that, for low noise operation, the normal state resistance of the HEB mixer element should be close to that of the embedding impedance of the mixer mount. |
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1472 |
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Yang, J. K. W.; Dauler, E.; Ferri, A.; Pearlman, A.; Verevkin, A.; Gol’tsman, G.; Voronov, B.; Sobolewski, R.; Keicher, W. E.; Berggren, K. K. |
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Fabrication development for nanowire GHz-counting-rate single-photon detectors |
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2005 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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15 |
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2 |
Pages |
626-630 |
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NbN SSPD, SNSPD |
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We have developed a fabrication process for GHz-counting-rate, single-photon, high-detection-efficiency, NbN, nanowire detectors. We have demonstrated two processes for the device patterning, one based on the standard polymethylmethacrylate (PMMA) organic positive-tone electron-beam resist, and the other based on the newer hydrogen silsesquioxane (HSQ) negative-tone spin-on-glass resist. The HSQ-based process is simple and robust, providing high resolution and the prospect of high fill-factors. Initial testing results show superconductivity in the films, and suggest that the devices exhibit photosensitivity. |
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1558-2515 |
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1466 |
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Baselmans, J. J. A.; Baryshev, A.; Reker, S. F.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Vahtomin, Yu.; Maslennikov, S.; Antipov, S.; Voronov, B.; Gol'tsman, G. |
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Title |
Direct detection effect in small volume hot electron bolometer mixers |
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Journal Article |
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2005 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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86 |
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16 |
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163503 (1 to 3) |
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HEB, mixer, direct detection effect |
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We measure the direct detection effect in a small volume (0.15μm×1μm×3.5nm)(0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electronbolometermixer at 1.6THz1.6THz. We find that the small signal sensitivity of the receiver is underestimated by 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when using calibration loads of 300K300K and 77K77K. Using a 200GHz200GHzbandpass filter at 4.2K4.2K the direct detection effect virtually disappears. This has important implications for the calibration procedure of these receivers in real telescope systems. |
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377 |
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Barends, R.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M. |
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Title |
Current-induced vortex unbinding in bolometer mixers |
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Journal Article |
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2005 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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87 |
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263506 (1 to 3) |
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HEB mixer numerical model, HEB model, IV-curves, vortex-antivortex, Berezinskii–Kosterlitz–Thouless theory, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model, self-heating effect, temperature profile |
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We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth. |
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