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Author Karpov, A.; Miller, D.; Stern, J. A.; Bumble, B.; LeDuc, H. G.; Zmuidzinas, J.
Title (up) Low noise NbTiN 1.25 THz SIS mixer for Herschel Space Observatory Type Conference Article
Year 2005 Publication Proc. 16th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages 450
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Publisher Place of Publication Göteborg, Sweden Editor
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Notes Approved no
Call Number RPLAB @ s @ nt_SIS_760at1p25THz Serial 359
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Author Goltsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M.
Title (up) Low-noise NbN phonon-cooled hot-electron bolometer mixers for terahertz heterodyne receivers Type Conference Article
Year 2005 Publication Proc. 9-th WMSCI Abbreviated Journal Proc. 9-th WMSCI
Volume 9 Issue Pages 154-159
Keywords NbN HEB mixers
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Publisher International Institute of Informatics and Systemics Place of Publication Editor
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Notes Approved no
Call Number Serial 547
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Author Palermo, C.; Varani, L.; Vaissière, J.-C.; Millithaler, J.-F.; Starikov, E.; Shiktorov, P.; Gruzinskis, V.; Azaïs, B.
Title (up) Monte Carlo calculation of diffusion coefficient, noise spectral density and noise temperature in HgCdTe Type Conference Article
Year 2005 Publication Proc. AIP Conf. Abbreviated Journal
Volume 780 Issue Pages 151-154
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Notes Approved no
Call Number Serial 460
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Author Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Baryshev, A.; Kooi, J.; Klapwijk, T. M.; Voronov, B.; de Korte, P.; Gol'tsman, G.
Title (up) NbN hot electron bolometer mixers: sensitivity, LO power, direct detection and stability Type Journal Article
Year 2005 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 15 Issue 2 Pages 484-489
Keywords HEB mixers, direct detection effect, stability, Allan variance
Abstract We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. Both the receiver noise temperature and the gain bandwidth can be improved by a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature of 950 K at 2.5 THz and 4.3 K, using a 0.4/spl times/4 /spl mu/m HEB mixer with a spiral antenna. At the same bias point, we obtain an IF gain bandwidth of 6 GHz. To comply with current demands on THz mixers for use in space based receivers we reduce the device size to 0.15/spl times/1 /spl mu/m and use a twin slot antenna. We report measurements of the noise temperature, LO power requirement, stability and the direct detection effect, using a mixer with a 1.6 THz twin slot antenna and a 1.462 THz solid state LO source with calibrated output power.
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ISSN 1051-8223 ISBN Medium
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Notes Approved no
Call Number Serial 546
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Author Gol'tsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Smirnov, Konstantin V.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M.
Title (up) NbN phonon-cooled hot-electron bolometer mixer for terahertz heterodyne receivers Type Conference Article
Year 2005 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 5727 Issue Pages 95-106
Keywords NbN HEB mixers
Abstract We present the results of our studies of NbN phonon-cooled HEB mixers at terahertz frequencies. The mixers were fabricated from NbN film deposited on a high-resistivity Si substrate with an MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 x 0.2 μm2 active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. The largest gain bandwidth of 5.2 GHz was achieved for a mixer based on 2 nm thick NbN film deposited on MgO layer over Si substrate. The gain bandwidth of the mixer based on 3.5 nm NbN film deposited on Si with MgO is 4.2 GHz and the noise bandwidth for the same device amounts to 5 GHz. We also present the results of our research into decrease of the direct detection contribution to the measured Y-factor and a possible error of noise temperature calculation. The use of a square nickel cell mesh as an IR-filter enabled us to avoid the effect of direct detection and measure apparent value of the noise temperature which was 16% less than that obtained using conventional black polyethylene IR-filter.
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Area Expedition Conference Terahertz and Gigahertz Electronics and Photonics IV
Notes Approved no
Call Number Serial 378
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