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An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K. |
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Title  |
Infrared phototransistor using capacitively coupled two-dimensional electron gas layers |
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2005 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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86 |
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172106 - 172106-3 |
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2DEG |
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RPLAB @ akorneev @ |
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603 |
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Koshelets, V. P.; Dmitriev, P. N.; Ermakov, A. B.; Filippenko, L. V.; Koryukin, O. V.; Torgashin, M. Yu.; Khudchenko, A. V. |
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Title |
Integrated superconducting spectrometer for atmosphere monitoring |
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Journal Article |
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Year |
2005 |
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Radiophys. Quant. Electron. |
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48 |
Issue |
10-11 |
Pages |
844-850 |
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SIR |
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0033-8443 |
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519 |
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Hübers, H. W.; Pavlov, S. G.; Semenov, A. D.; Tredicucci, A.; Köhler, R.; Mahler, L.; Beere, H. E.; Linfield, E. H.; Ritchie, D. A. |
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Title |
Investigation of a 2.5 THz quantum cascade laser as local oscillator |
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Conference Article |
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2005 |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
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18 |
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Göteborg, Sweden |
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RPLAB @ s @ qc_lasers_huebers |
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366 |
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Vaks, V. L.; Kurin, V. V.; Pankratov, A. L.; Koshelets, V. P. |
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Investigation of spectral properties of phase-focked flux flow oscillator |
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2005 |
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ISEC |
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PD-04 |
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SIR, FFO |
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Netherlands |
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522 |
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Hajenius, M.; Barends, R.; Gao, J. R.; Klapwijk, T. M.; Baselmans, J. J. A.; Baryshev, A.; Voronov, B.; Gol'tsman, G. |
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Title |
Local resistivity and the current-voltage characteristics of hot electron bolometer mixers |
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Journal Article |
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Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
15 |
Issue |
2 |
Pages |
495-498 |
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Keywords |
HEB mixer distributed model, HEB distributed model, distributed HEB model |
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Abstract |
Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling. |
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1051-8223 |
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980 |
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