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Hoogeveen, R. W. M.; Yagoubov, P. A.; de Lange, A.; Selig, A. M.; Koshelets, V. P.; Ellison B. N.; Birk, M. |
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Superconducting integrated receiver development for TELIS |
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2005 |
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Proc. 12th International Symposium on Remote Sensing |
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Bruges, Belgium |
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Goltsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M. |
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Title |
Low-noise NbN phonon-cooled hot-electron bolometer mixers for terahertz heterodyne receivers |
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Conference Article |
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2005 |
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Proc. 9-th WMSCI |
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Proc. 9-th WMSCI |
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9 |
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154-159 |
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NbN HEB mixers |
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International Institute of Informatics and Systemics |
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547 |
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Nagatsuma, T.; Hirata, A.; Sato, Y.; Yamaguchi, R.; Takahashi, H.; Kosugi, T.; Tokumitsu, M.; Sugahara, H.; Furuta, T.; Ito, H. |
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Sub-Terahertz Wireless Communications Technologies |
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Conference Article |
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2005 |
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Proc. 18th International Conference on Applied Electromagnetics and Communications (ICECom 2005) |
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1-4 |
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subterahartz terahertz THz communications |
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This paper presents a 10-Gb/s wireless link system that uses a 120-GHz-band sub-terahertz electro-magnetic waves. In the transmitter, photonic techniques are used for generation, modulation, and emission of the sub-THz signals, while the receiver is composed of all-electronic devices using InP-HEMTs. |
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593 |
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Stellari, Franco; Song, Peilin |
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Testing of ultra low voltage CMOS microprocessors using the superconducting single-photon detector (SSPD) |
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2005 |
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Proc. 12th IPFA |
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Proc. 12th IPFA |
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2 |
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SSPD, CMOS testing |
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In F. Stellari and P. Song (2004) the authors have shown a comparison among different detectors used for diagnosing integrated circuits (ICs) by means of the PICA method. In their experiments they used two versions of the SSPD detector (p-SSPD is a prototype version, while c-SSPD is the first commercially available generation of the detector as presented in W. K. Lo et al. (2002), as well as the imaging detector (S-25 photo-multiplier tube (PMT) as discussed in W. G. McMullan (1987)) used in the conventional PICA technique. A microprocessor chip fabricated in a 0.13 μm 1.2 V technology is used to show that c-SSPD provides a significant reduction in acquisition time for the collection of optical waveforms from chips running at very low. In this paper, the authors summarize the main results. |
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IEEE |
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0-7803-9301-5 |
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1055 |
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Milostnaya, I.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Slepneva, S.; Seleznev, V.; Chulkova, G.; Okunev, O.; Smirnov, K.; Voronov, B.; Gol’tsman, G.; Slysz, W.; Kitaygorsky, J.; Cross, A.; Pearlman, A.; Sobolewski, R. |
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Superconducting nanostructured detectors capable of single photon counting of mid-infrared optical radiation |
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2005 |
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Proc. SPIE |
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Proc. SPIE |
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5957 |
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59570A (1 to 9) |
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SSPD, SNSPD, single-photon detectors, superconductors, superconducting |
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We report on our progress in research and development of ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs were made of the 4-nm-thick NbN films with Tc 11 K, patterned as meander-shaped, 100-nm-wide strips, and covering an area of 10×10 μm2. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, a hotspot of excited electrons and redistribution of the biasing supercurrent, jointly produce a picosecond voltage transient signal across the superconducting nanostripe. The SSPDs are typically operated at 4.2 K, but their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by the optical absorption of our 4-nm-thick NbN film. With the wavelength increase of the incident photons,the QE of SSPDs decreases significantly, but even at the wavelength of 6 μm, the detector is able to count single photons and exhibits QE of about 10-2 %. The dark (false) count rate at 2 K is as low as 2x10-4 s,-1 which makes our detector essentially a background-limited sensor. The very low dark-count rate results in a noise equivalent power (NEP) below 10-18 WHz-1/2 for the mid-infrared range (6 μm). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for another, lower-Tc materials with a narrow superconducting gap and low quasiparticles diffusivity. The use of such superconductors should shift the cutoff wavelength below 10 μm. |
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SPIE |
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Rogalski, A.; Dereniak, E.L.; Sizov, F.F. |
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Infrared Photoelectronics |
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1458 |
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