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Koshelets, V. P.; Borisov, V. B.; Dmitriev, P. N.; Ermakov, A. B.; Filippenko, L. V.; Khudchenko, A. V.; Kiselev, O. S.; Lapitskaya, I. L.; Sobolev, A. S.; Torgashin, M. Yu.; Yagoubov, P. A.; Hoogeveen, R. W. M. |
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Integrated submillimeter receiver for TELIS |
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Journal Article |
Year |
2006 |
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Joint International Workshop “Nanosensors and Arrays of Quantum Dots and Josephson Junctions for space applications”, 10th International Workshop “From Andreev Reflection to the Earliest Universe” |
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Bjorkliden, Kiruna, Sweden |
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527 |
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Yagoubov, P.; Hoogeveen, R.; Torgashin, M.; Khudchenko, A.; Koshelets, V.; Suttiwong, N.; Wagner, G.; Birk M. |
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550-650 GHz spectrometer development for TELIS |
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Conference Article |
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2006 |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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338-341 |
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528 |
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Walther, Christoph; Scalari, Giacomo; Faist, Jerome; Beere, Harvey; Ritchie, David |
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Low frequency terahertz quantum cascade laser operating from 1.6 to 1.8 THz |
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Journal Article |
Year |
2006 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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89 |
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231121(1-3) |
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QCL, 360 uW at 1.6 THz |
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The authors report a GaAs/Al0.1Ga0.9As quantum cascade laser based on a bound-to-continuum transition optimized for low frequency operation. High tunability of the gain curve is achieved by the Stark effect and laser emission is measured between 1.6 and 1.8 THz. Pulsed mode operation up to 95 K and continuous wave operation up to 80 K are reported. The dynamical range in current is as high as 43%. |
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629 |
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Brown, E. R.; Lee, A. W. M.; Navi, B. S.; Bjarnason, J. E. |
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Characterization of a planar self-complementary square-spiral antenna in the THz region |
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Journal Article |
Year |
2006 |
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Microwave and Optical Technology Letters |
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Microwave Opt Technol Lett |
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48 |
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3 |
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524-529 |
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optical antennas; square spiral antenna; self complementary THz; photomixing; lens; method of moments; geometric optics; physical optics |
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This paper describes a compact, self-complementary square-spiral antenna on a GaAs substrate with a broadside high-directivity (~9 dB) frequency-independent pattern when coupled through a silicon hyperhemisphere. The driving-point resistance undulates between ~00 and 300Ω from 200 GHz to 1 THz—much higher than the 72Ω value from Booker's modified formula, but quite beneficial for coupling to high-impedance broadband devices |
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RPLAB @ gujma @ |
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736 |
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Kitaygorsky, Jennifer; Komissarov, I.; Jukna, A.; Sobolewski, Roman; Minaeva, O.; Kaurova, N.; Korneev, A.; Voronov, B.; Milostnaya, I.; Gol'Tsman, Gregory |
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Nanosecond, transient resistive state in two-dimensional superconducting stripes |
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2006 |
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Proc. APS March Meeting |
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Proc. APS March Meeting |
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H38.13 |
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NbN stripes |
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We have observed, nanosecond-in-duration, transient voltage pulses, generated across two-dimensional (2-D) NbN stripes (width: 100--500 nm; thickness: 3.5--10 nm) of various lengths (1--500 μm), when the wires were completely isolated from the outside world, biased at currents close to the critical current, and kept at temperatures below the mean-field critical temperature Tco. In 2-D superconducting films, at temperatures below the Kosterlitz-Thouless transition, all vortices are bound and the resistance is zero. However, these vortices can get unbound when a large enough transport current is applied. The latter results in a transient resistive state, which manifests itself as spontaneous, 2.5--8-ns-long voltage pulses with the amplitude corresponding to the unbinding potential of a vortex pair. In our 100-nm-wide stripes, we have also observed the formation of phase slip centers (PSCs) at temperatures close to Tco, and a mixture of PSCs and unbound vortex-antivortex pairs at low temperatures. |
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Baltimore, MD |
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1454 |
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