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Koshelets, V. P.; Khudchenko, A. V. |
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Analysis of spectral characteristics of a superconducting integrated receiver |
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2006 |
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J. Communications Technol. Electron. |
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51 |
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5 |
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596-603 |
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RPLAB @ s @ mix_SIR |
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400 |
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Author |
Koshelets, V. P.; Khudchenko, A. V. |
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Title |
Analysis of spectral characteristics of a superconducting integrated receiver |
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Journal Article |
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Year |
2006 |
Publication |
J. Communications Technol. Electron. |
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51 |
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5 |
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596-603 |
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SIR |
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1064-2269 |
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526 |
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Atacama Pathfinder Experiment APEX |
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2006 |
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RPLAB @ s @ APEX_proj |
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396 |
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Kenyon, M.; Day, P. K.; Bradford, C. M.; Bock, J. J.; Leduc, H. G. |
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Title |
Background-limited membrane-isolated TES bolometers for far-IR/submillimeter direct-detection spectroscopy |
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2006 |
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Nucl. Instr. & Meth. Phys. Res. A |
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559 |
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456-458 |
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RPLAB @ s @ TES_NEP_1e_19 |
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384 |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A. |
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Title |
Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? |
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Conference Article |
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2006 |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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187-189 |
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NbN HEB mixers |
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We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm). |
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1439 |
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