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Author Koshelets, V. P.; Khudchenko, A. V.
Title (up) Analysis of spectral characteristics of a superconducting integrated receiver Type Journal Article
Year 2006 Publication J. Communications Technol. Electron. Abbreviated Journal
Volume 51 Issue 5 Pages 596-603
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Call Number RPLAB @ s @ mix_SIR Serial 400
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Author Koshelets, V. P.; Khudchenko, A. V.
Title (up) Analysis of spectral characteristics of a superconducting integrated receiver Type Journal Article
Year 2006 Publication J. Communications Technol. Electron. Abbreviated Journal
Volume 51 Issue 5 Pages 596-603
Keywords SIR
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ISSN 1064-2269 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 526
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Author
Title (up) Atacama Pathfinder Experiment APEX Type
Year 2006 Publication Abbreviated Journal
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Call Number RPLAB @ s @ APEX_proj Serial 396
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Author Kenyon, M.; Day, P. K.; Bradford, C. M.; Bock, J. J.; Leduc, H. G.
Title (up) Background-limited membrane-isolated TES bolometers for far-IR/submillimeter direct-detection spectroscopy Type Journal Article
Year 2006 Publication Nucl. Instr. & Meth. Phys. Res. A Abbreviated Journal
Volume 559 Issue Pages 456-458
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Call Number RPLAB @ s @ TES_NEP_1e_19 Serial 384
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Author Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A.
Title (up) Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? Type Conference Article
Year 2006 Publication Proc. 17th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 17th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 187-189
Keywords NbN HEB mixers
Abstract We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
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Call Number Serial 1439
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