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Author Kopp, Victor I.; Churikov, Victor M.; Zhang, Guoyin; Singer, Jonathan; Draper, Christopher W.; Chao, Norman; Neugroschl, Daniel; Genack, Azriel Z. openurl 
  Title Chiral fiber gratings: perspectives and challenges for sensing applications Type Conference Article
  Year 2007 Publication Proceedings of Third european workshop on optical fibre sensors Abbreviated Journal Proc. 3rd European Workshop on Opt. Fibre Sensors  
  Volume 6619 Issue Pages 66190B-(1-8)  
  Keywords optical fiber gratings, chiral fiber gratings applications, chiral gratings applications, from chiralphotonics  
  Abstract Chiral fiber gratings are produced in a microforming process in which optical fibers with noncircular or nonconcentric cores are twisted as they pass though a miniature oven. Periodic glass structures as stable as the glass material itself are produced with helical pitch that ranges from under a micron to hundreds of microns. The geometry of the fiber cross section determines the symmetry of the resulting structure which in turn determines its polarization selectivity. Single helix structures are polarization insensitive while double helix gratings interact only with a single optical polarization. Both single and double helix gratings may act as a fiber long period grating, coupling the core and cladding modes. The coupling is manifested in a series of narrow dips in the transmission spectrum. The dip position is sensitive to fiber elongation, twist and temperature, and to the refractive index of the surrounding medium. The suitability of chiral gratings for sensing pressure, temperature and liquid levels is investigated. Polarization insensitive single helix silica glass gratings display excellent stability up to temperatures of 6000C, while a pressure sensor with dynamic range of nearly 40 dB is demonstrated in polarization selective double helix gratings.  
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  Call Number Serial (up) 855  
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Author openurl 
  Title ГОСТ 3.1119-83. ЕСТД. Общие требования к комплектности и оформлению комплектов документов на единичные технологические процессы Type Book Whole
  Year 2007 Publication Abbreviated Journal  
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  Keywords gost, detproj  
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  Notes Approved no  
  Call Number Serial (up) 869  
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Author Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. url  doi
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  Title Electron heating in metallic resistors at sub-Kelvin temperature Type Journal Article
  Year 2007 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 76 Issue Pages 165426(1-9)  
  Keywords electron heating in resistor, HEB distributed model, HEB model, hot electrons  
  Abstract In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments.  
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  Notes Recommended by Klapwijk as example for writing the article on the HEB model. Approved no  
  Call Number Serial (up) 936  
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Author Bell, M.; Sergeev, A.; Mitin, V.; Bird, J.; Verevkin, A.; Gol'tsman, G. openurl 
  Title One-dimensional resistive states in quasi-two-dimensional superconductors Type Journal Article
  Year 2007 Publication arXiv:0709.0709v1 [cond-mat.supr-con] Abbreviated Journal  
  Volume Issue Pages 1-11  
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  Abstract We investigate competition between one- and two-dimensional topological excitations – phase slips and vortices – in formation of resistive states in quasi-two-dimensional superconductors in a wide temperature range below the mean-field transition temperature T(C0). The widths w = 100 nm of our ultrathin NbN samples is substantially larger than the Ginzburg-Landau coherence length ξ = 4nm and the fluctuation resistivity above T(C0) has a two-dimensional character. However, our data shows that the resistivity below T(C0) is produced by one-dimensional excitations, – thermally activated phase slip strips (PSSs) overlapping the sample cross-section. We also determine the scaling phase diagram, which shows that even in wider samples the PSS contribution dominates over vortices in a substantial region of current/temperature variations. Measuring the resistivity within seven orders of magnitude, we find that the quantum phase slips can only be essential below this level.  
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  Call Number RPLAB @ atomics90 @ Serial (up) 948  
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Author Kitaygorsky, Jennifer; Komissarov, I.; Jukna, A.; Minaeva, O.; Kaurova, N.; Divochiy, A.; Korneev, A.; Tarkhov, M.; Voronov, B.; Milostnaya, I.; Gol'tsman, G.; Sobolewski, R. url  openurl
  Title Fluctuations in two-dimensional superconducting NbN nanobridges and nanostructures meanders Type Abstract
  Year 2007 Publication Proc. APS March Meeting Abbreviated Journal Proc. APS March Meeting  
  Volume 52 Issue 1 Pages L9.00013  
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  Abstract We have observed fluctuations, manifested as sub-nanosecond to nanosecond transient, millivolt-amplitude voltage pulses, generated in two-dimensional NbN nanobridges, as well as in extended superconducting meander nanostructures, designed for single photon counting. Both nanobridges and nano-stripe meanders were biased at currents close to the critical current and measured in a range of temperatures from 1.5 to 8 K. During the tests, the devices were blocked from all incoming radiation by a metallic enclosure and shielded from any external magnetic fields. We attribute the observed spontaneous voltage pulses to the Kosterlitz-Thouless-type fluctuations, where the high enough applied bias current reduces the binding energy of vortex-antivortex pairs and, subsequently, thermal fluctuations break them apart causing the order parameter to momentarily reduce to zero, which in turn causes a transient voltage pulse. The duration of the voltage pulses depended on the device geometry (with the high-kinetic inductance meander structures having longer, nanosecond, pulses) while their rate was directly related to the biasing current as well as temperature.  
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  Notes Approved no  
  Call Number Serial (up) 1027  
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