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Khosropanah, P.; Gao, J. R.; Laauwen, W. M.; Hajenius, M; Klapwijk, T. M. |
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Title |
Low noise NbN hot electron bolometer mixer at 4.3 THz |
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Journal Article |
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Year |
2007 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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91 |
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221111 (1 to 3) |
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Keywords |
NbN HEB mixers, NbN, contacts cleaning |
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Abstract |
We have studied the sensitivity of a superconducting NbN hot electron bolometer mixer integrated with a spiral antenna at 4.3 THz. Using hot/cold blackbody loads and a beam splitter all in vacuum, we measured a double sideband receiver noise temperature of 1300 K at the optimum local oscillator (LO) power of 330 nW, which is about 12 times the quantum noise (hnu/2kB). Our result indicates that there is no sign of degradation of the mixing process at the superterahertz frequencies. Moreover, a measurement method is introduced which allows us for an accurate determination of the sensitivity despite LO power fluctuations. |
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584 |
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Author |
Pruessner, Marcel W.; Stievater, Todd H.; Rabinovich, William S. |
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Title |
Integrated waveguide Fabry-Perot microcavities with silicon/air Bragg mirrors |
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Journal Article |
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2007 |
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Optics Letters |
Abbreviated Journal |
Opt. Lett. |
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32 |
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5 |
Pages |
533 |
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0146-9592 |
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484 |
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Kooi, J. W.; Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Dieleman, P.; Baryshev, A.; de Lange, G. |
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Title |
IF impedance and mixer gain of NbN hot electron bolometers |
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Journal Article |
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2007 |
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J. Appl. Phys. |
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101 |
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4 |
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044511 |
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0021-8979 |
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RPLAB @ s @ |
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445 |
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Cao, Aiqin; Jiang, L.; Chen, S.H.; Antipov, S.V.; Shi, S.C. |
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Title |
IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer |
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Conference Article |
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2007 |
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Proc. International conference on microwave and millimeter wave technology |
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Proc. ICMMT |
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1-3 |
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HEB, mixer, gain bandwidth |
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In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases. |
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Builin |
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RPLAB @ lobanovyury @ |
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575 |
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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. |
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Title |
Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes |
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Journal Article |
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2007 |
Publication |
J. Appl. Phys. |
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J. Appl. Phys. |
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Volume |
101 |
Issue |
12 |
Pages |
124508 (1 to 6) |
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Keywords |
HEB, mixer, membrane |
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The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach. |
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0021-8979 |
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560 |
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