| Records |
| Author |
Divochiy, Aleksander; Marsili, Francesco; Bitauld, David; Gaggero, Alessandro; Leoni, Roberto; Mattioli, Francesco; Korneev, Alexander; Seleznev, Vitaliy; Kaurova, Nataliya; Minaeva, Olga; Gol'tsman, Gregory; Lagoudakis, Konstantinos G.; Benkhaoul, Moushab; Lévy, Francis; Fiore, Andrea |
| Title |
Superconducting nanowire photon-number-resolving detector at telecommunication wavelengths |
Type |
Journal Article |
| Year |
2008 |
Publication |
Nat. Photon. |
Abbreviated Journal |
Nat. Photon. |
| Volume |
2 |
Issue |
5 |
Pages |
302-306 |
| Keywords |
SSPD, photon-number-resolving |
| Abstract |
Optical-to-electrical conversion, which is the basis of the operation of optical detectors, can be linear or nonlinear. When high sensitivities are needed, single-photon detectors are used, which operate in a strongly nonlinear mode, their response being independent of the number of detected photons. However, photon-number-resolving detectors are needed, particularly in quantum optics, where n-photon states are routinely produced. In quantum communication and quantum information processing, the photon-number-resolving functionality is key to many protocols, such as the implementation of quantum repeaters1 and linear-optics quantum computing2. A linear detector with single-photon sensitivity can also be used for measuring a temporal waveform at extremely low light levels, such as in long-distance optical communications, fluorescence spectroscopy and optical time-domain reflectometry. We demonstrate here a photon-number-resolving detector based on parallel superconducting nanowires and capable of counting up to four photons at telecommunication wavelengths, with an ultralow dark count rate and high counting frequency. |
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916 |
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Tarkhov, M.; Claudon, J.; Poizat, J. Ph.; Korneev, A.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Semenov, A. V.; Gol'tsman, G. |
| Title |
Ultrafast reset time of superconducting single photon detectors |
Type |
Journal Article |
| Year |
2008 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
92 |
Issue |
24 |
Pages |
241112 (1 to 3) |
| Keywords |
SSPD, SNSPD |
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0003-6951 |
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no |
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429 |
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Dorenbos, S. N.; Reiger, E. M.; Perinetti, U.; Zwiller, V.; Zijlstra, T.; Klapwijk, T. M. |
| Title |
Low noise superconducting single photon detectors on silicon |
Type |
Journal Article |
| Year |
2008 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
93 |
Issue |
13 |
Pages |
131101 |
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0003-6951 |
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RPLAB @ s @ |
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436 |
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Cherednichenko, S.; Drakinskiy, V. |
| Title |
Low noise hot-electron bolometer mixers for terahertz frequencies |
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Journal Article |
| Year |
2008 |
Publication |
J. Low Temp. Phys. |
Abbreviated Journal |
J. Low Temp. Phys. |
| Volume |
151 |
Issue |
1-2 |
Pages |
575-579 |
| Keywords |
HEB, mixer, gain bandwidth, MgB2 |
| Abstract |
Hot-electron bolometer (HEB) mixers are used in many low noise heterodyne radio astronomical receivers. Their noise temperature is at the level of 10–15 times the quantum limit. However, their gain bandwidth is a serious limiting factor. Here we review the state of the art of the HEB mixers gain bandwidth for different materials and substrates. We compare the gain bandwidth of HEB mixers made on bulk substrates and thin membranes. Finally, results for MgB2 thin films for broadband HEB mixers are discussed. |
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0022-2291 |
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RPLAB @ lobanovyury @ |
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553 |
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Kawano, Yukio; Ishibashi, Koji |
| Title |
An on-chip near-field terahertz probe and detector |
Type |
Journal Article |
| Year |
2008 |
Publication |
Nature Photonics |
Abbreviated Journal |
Nature Photon |
| Volume |
2 |
Issue |
10 |
Pages |
618-621 |
| Keywords |
single molecule, terahertz, THz, near-field, microscopy, imaging, 2DEG, GaAs/AlGaAs, detector, applications |
| Abstract |
The advantageous properties of terahertz waves, such as their transmission through objects opaque to visible light, are attracting attention for imaging applications. A promising approach for achieving high spatial resolution is the use of near-field imaging. Although this method has been well established in the visible and microwave regions, it is challenging to perform in the terahertz region. In the terahertz techniques investigated to date, detectors have been located remotely from the probe, which degrades sensitivity, and the influence of far-field waves is unavoidable. Here we present a new integrated detection device for terahertz near-field imaging in which all the necessary detection components — an aperture, a probe and a terahertz detector — are integrated on one semiconductor chip, which is cryogenically cooled. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone and promises new capabilities for high-resolution terahertz imaging. |
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1749-4885 |
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no |
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570 |
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