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Author |
Dorenbos, S. N.; Reiger, E. M.; Perinetti, U.; Zwiller, V.; Zijlstra, T.; Klapwijk, T. M. |
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Title |
Low noise superconducting single photon detectors on silicon |
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Journal Article |
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Year |
2008 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
93 |
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13 |
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131101 |
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0003-6951 |
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no |
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RPLAB @ s @ |
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436 |
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Author |
Steier, W. H.; Oh, M. C.; Zhang, C.; Zhang, H.; Szep, A.; Fetterman, H. R.; Chang, Y.; Erlig, H.; Tsap, B.; Dalton, L. R. |
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Title |
Electro-optic polymers and applications in next generation phase array antennas |
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Miscellaneous |
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2008 |
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IR modulator |
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Presentation. The year of the publication is from the file (pdf) properties. |
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539 |
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Author |
Cherednichenko, S.; Drakinskiy, V. |
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Title |
Low noise hot-electron bolometer mixers for terahertz frequencies |
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Journal Article |
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Year |
2008 |
Publication |
J. Low Temp. Phys. |
Abbreviated Journal |
J. Low Temp. Phys. |
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Volume |
151 |
Issue |
1-2 |
Pages |
575-579 |
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Keywords |
HEB, mixer, gain bandwidth, MgB2 |
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Abstract |
Hot-electron bolometer (HEB) mixers are used in many low noise heterodyne radio astronomical receivers. Their noise temperature is at the level of 10–15 times the quantum limit. However, their gain bandwidth is a serious limiting factor. Here we review the state of the art of the HEB mixers gain bandwidth for different materials and substrates. We compare the gain bandwidth of HEB mixers made on bulk substrates and thin membranes. Finally, results for MgB2 thin films for broadband HEB mixers are discussed. |
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0022-2291 |
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no |
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RPLAB @ lobanovyury @ |
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553 |
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Fu, K.; Zannoni, R.; Chan, C.; Adams, S. H.; Nicholson, J.; Polizzi, E.; Yngvesson, K. S. |
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Title |
Terahertz detection in single wall carbon nanotubes |
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Journal Article |
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Year |
2008 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
92 |
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3 |
Pages |
033105 |
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Keywords |
HEB, single wall, carbon nanotube, CNT, SWNT, SWCNT, terahertz detection, THz |
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Abstract |
It is reported that terahertz radiation from 0.69 to 2.54 THz has been sensitively detected in a device consisting of bundles of carbon nanotubes containing single wall metallic carbon nanotubes, quasioptically coupled through a lithographically fabricated antenna, and a silicon lens. The measured data are consistent with a bolometric detection process in the metallic tubes and the devices show promise for operation well above 4.2 K. |
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0003-6951 |
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NEP is not shown |
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no |
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566 |
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Author |
Kawano, Yukio; Ishibashi, Koji |
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An on-chip near-field terahertz probe and detector |
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Journal Article |
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2008 |
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Nature Photonics |
Abbreviated Journal |
Nature Photon |
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2 |
Issue |
10 |
Pages |
618-621 |
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Keywords |
single molecule, terahertz, THz, near-field, microscopy, imaging, 2DEG, GaAs/AlGaAs, detector, applications |
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Abstract |
The advantageous properties of terahertz waves, such as their transmission through objects opaque to visible light, are attracting attention for imaging applications. A promising approach for achieving high spatial resolution is the use of near-field imaging. Although this method has been well established in the visible and microwave regions, it is challenging to perform in the terahertz region. In the terahertz techniques investigated to date, detectors have been located remotely from the probe, which degrades sensitivity, and the influence of far-field waves is unavoidable. Here we present a new integrated detection device for terahertz near-field imaging in which all the necessary detection components — an aperture, a probe and a terahertz detector — are integrated on one semiconductor chip, which is cryogenically cooled. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone and promises new capabilities for high-resolution terahertz imaging. |
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1749-4885 |
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570 |
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