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Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. |
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Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers |
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2009 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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95 |
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19 |
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3 |
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2DEG |
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The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s. |
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RPLAB @ gujma @ |
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673 |
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Dauler, Eric; Kerman, Andrew; Robinson, Bryan; Yang, Joel; Voronov, Boris; Goltsman, Gregory; Hamilton, Scott; Berggren, Karl |
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Photon-number-resolution with sub-30-ps timing using multi-element superconducting nanowire single photon detectors |
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2009 |
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J. Modern Opt. |
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J. Modern Opt. |
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56 |
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2 |
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364-373 |
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PNR SSPD; SNSPD; photon-number-resolution; superconducting nanowire single photon detector; timing jitter; system detection efficiency |
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A photon-number-resolving detector based on a four-element superconducting nanowire single photon detector is demonstrated to have sub-30-ps resolution in measuring the arrival time of individual photons. This detector can be used to characterize the photon statistics of non-pulsed light sources and to mitigate dead-time effects in high-speed photon counting applications. Furthermore, a 25% system detection efficiency at 1550 nm was demonstrated, making the detector useful for both low-flux source characterization and high-speed photon-counting and quantum communication applications. The design, fabrication and testing of this detector are described, and a comparison between the measured and theoretical performance is presented. |
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RPLAB @ gujma @ |
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700 |
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Doi, Y.; Wang, Z.; Ueda, T.; Nickels, P.; Komiyama, S.; Patrashin, M.; Hosako, I.; Matsuura, S.; Shirahata, M.; Sawayama, Y.; Kawada, M. |
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CSIP – a novel photon-counting detector applicable for the SPICA far-infrared instrument |
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2009 |
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SPICA |
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SPICA |
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SPICA Workshop 2009 |
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detectors; Infrared |
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We describe a novel GaAs/AlGaAs double-quantumwell device for the infrared photon detection, called ChargeSensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal ampli<ef><ac><81>cation by another QW as a channel with very high gain, which provides us with extremely high responsivity (104 – 106 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 μm) has an excellent sensitivity; the noise equivalent power (NEP) of 7 × 10-19 W/ with the quantum effciency of ~ 2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of > 106, low output impedance of 103 – 104 Ohms, and relatively high operation temperature (> 2 K). We discuss possible applications of the CSIP to FIR photon detection covering 35 – 60 μm waveband, which is a gap uncovered with presently available photoconductors. |
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RPLAB @ gujma @ |
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672 |
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Driessen, E. F. C.; Braakman, F. R.; Reiger, E. M.; Dorenbos, S. N.; Zwiller, V.; de Dood, M. J. A. |
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Impedance model for the polarization-dependent optical absorption of superconducting single-photon detectors |
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2009 |
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Eur. Phys. J. Appl. Phys. |
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47 |
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10701 |
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SSPD, SNSPD |
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We measured the single-photon detection efficiency of NbN superconducting single-photon detectors as a function of the polarization state of the incident light for different wavelengths in the range from 488 nm to 1550 nm. The polarization contrast varies from ~% at 488 nm to~0% at 1550 nm, in good agreement with numerical calculations. We use an optical-impedance model to describe the absorption for polarization parallel to the wires of the detector. For the extremely lossy NbN material, the absorption can be kept constant by keeping the product of layer thickness and filling factor constant. As a consequence, the maximum possible absorption is independent of filling factor. By illuminating the detector through the substrate, an absorption efficiency of ~0% can be reached for a detector on Si or GaAs, without the need for an optical cavity. |
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RPLAB @ alex_kazakov @ |
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1062 |
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Driessen, Eduard Frans Clemens |
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Title |
Coupling light to periodic nanostructures |
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2009 |
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Faculty of Science, Leiden University |
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Fac. Scien., Leiden Un. |
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144 |
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SSPD |
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Issue Date: 2009-09-24 |
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675 |
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