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Konstantatos, Gerasimos; Sargent, Edward H. |
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Nanostructured materials for photon detection |
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Journal Article |
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2010 |
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Nature Nanotechnology |
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Nat. Nanotech. |
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5 |
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6 |
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391–400 |
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The detection of photons underpins imaging, spectroscopy, fibre-optic communications and time-gated distance measurements. Nanostructured materials are attractive for detection applications because they can be integrated with conventional silicon electronics and flexible, large-area substrates, and can be processed from the solution phase using established techniques such as spin casting, spray coating and layer-by-layer deposition. In addition, their performance has improved rapidly in recent years. Here we review progress in light sensing using nanostructured materials, focusing on solution-processed materials such as colloidal quantum dots and metal nanoparticles. These devices exhibit phenomena such as absorption of ultraviolet light, plasmonic enhancement of absorption, size-based spectral tuning, multiexciton generation, and charge carrier storage in surface and interface traps. |
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SSPD |
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RPLAB @ gujma @ |
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684 |
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Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A. |
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Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications |
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2010 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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97 |
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15 |
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3 |
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SSPD |
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We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K. |
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RPLAB @ gujma @ |
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681 |
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Maret, S.; Bacmann, A.; Bottinelli, S.; Parise, B.; Caux, E.; Faure, A.; Bergin, E. A.; Blake, G. A.; Castets, A.; Ceccarelli, C.; Cernicharo, J.; Coutens, A.; Crimier, N.; Demyk, K.; Dominik, C.; Gerin, M.; Hennebelle, P.; Henning, T.; Kahane, C.; Klotz, A.; Melnick, G.; Pagani, L.; Schilke, P.; Vastel, C.; Wakelam, V.; Walters, A.; Baudry, A.; Bell, T.; Benedettini, M.; Boogert, A.; Cabrit, S.; Caselli, P.; Codella, C.; Comito, C.; Encrenaz, P.; Falgarone, E.; Fuente, A.; Goldsmith, P. F.; Helmich, F.; Herbst, E.; Jacq, T.; Kama, M.; Langer, W.; Lefloch, B.; Lis, D.; Lord, S.; Lorenzani, A.; Neufeld, D.; Nisini, B.; Pacheco, S.; Phillips, T.; Salez, M.; Saraceno, P.; Schuster, K.; Tielens, X.; van der Tak, F.; van der Wiel, M. H. D.; Viti, S.; Wyrowski, F.; Yorke, H. |
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Nitrogen hydrides in the cold envelope of IRAS 16293-2422 |
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Journal Article |
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2010 |
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Astron. Astrophys. |
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521 |
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L52 |
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HEB mixer applications, HIFI, Herschel, ISM: abundances / ISM: general / astrochemistry |
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Nitrogen is the fifth most abundant element in the Universe, yet the gas-phase chemistry of N-bearing species remains poorly understood. Nitrogen hydrides are key molecules of nitrogen chemistry. Their abundance ratios place strong constraints on the production pathways and reaction rates of nitrogen-bearing molecules. We observed the class 0 protostar IRAS 16293-2422 with the heterodyne instrument HIFI, covering most of the frequency range from 0.48 to 1.78 THz at high spectral resolution. The hyperfine structure of the amidogen radical o-NH2 is resolved and seen in absorption against the continuum of the protostar. Several transitions of ammonia from 1.2 to 1.8 THz are also seen in absorption. These lines trace the low-density envelope of the protostar. Column densities and abundances are estimated for each hydride. We find that NH:NH2:NH3 â‰<2c6> 5:1:300. Dark clouds chemical models predict steady-state abundances of NH2 and NH3 in reasonable agreement with the present observations, whilst that of NH is underpredicted by more than one order of magnitude, even using updated kinetic rates. Additional modelling of the nitrogen gas-phase chemistry in dark-cloud conditions is necessary before having recourse to heterogen processes. |
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1094 |
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Heeres, R.W.; Dorenbos, S.N.; Koene, B.; Solomon, G.S.; Kouwenhoven, L.P.; Zwiller, V. |
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On-Chip Single Plasmon Detection |
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Journal Article |
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2010 |
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Nano Letters |
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Nano Lett. |
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10 |
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661-664 |
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optical antennas; SSPD; Single surface plasmons; superconducting detectors; semiconductor quantum dots; nanophotonics |
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Surface plasmon polaritons (plasmons) have the potential to interface electronic and optical devices. They could prove extremely useful for integrated quantum information processing. Here we demonstrate on-chip electrical detection of single plasmons propagating along gold waveguides. The plasmons are excited using the single-photon emission of an optically emitting quantum dot. After propagating for several micrometers, the plasmons are coupled to a superconducting detector in the near-field. Correlation measurements prove that single plasmons are being detected. |
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RPLAB @ akorneev @ |
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620 |
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Karasik, Boris S.; Cantor, Robin |
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Title |
Optical NEP in hot-electron nanobolometers |
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Journal Article |
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2010 |
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1-7 |
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HEB, Ti, NEP, femtowatt, SAFARI, SPICA, 650 GHz, 0.65 THz, 460 um, twin slot antenna, SQUID readout |
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For the first time, we have measured the optical noise equivalent power (NEP) in titanium (Ti) superconducting hot-electron nanobolometers (nano-HEBs). The bolometers were 2{\mu}mx1{\mu}mx20nm and 1{\mu}mx1{\mu}mx20nm planar antenna-coupled devices. The measurements were done at {\lambda} = 460 {\mu}m using a cryogenic black body radiation source delivering optical power from a fraction of a femtowatt to a few 100s of femtowatts. A record low NEP = 3x10^{-19} W/Hz^{1/2} at 50 mK has been achieved. This sensitivity meets the requirements for SAFARI instrument on the SPICA telescope. The ways for further improvement of the nano-HEB detector sensitivity are discussed. |
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To appear in Proc. 21st Int. Symp. on Spc. THz Technol., Oxford, UK, 23-25 March, 2010 |
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623 |
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