| Records |
| Author |
Ожегов, Р.В.; Горшков, К.Н.; Окунев, О.В.; Гольцман, Г.Н. |
| Title |
Сверхпроводниковый смеситель на эффекте электронного разогрева как элемент матрицы системы построения тепловых изображений |
Type |
Journal Article |
| Year |
2010 |
Publication |
Письма в Журнал технической физики |
Abbreviated Journal |
Письма в ЖТФ |
Volume  |
36 |
Issue |
21 |
Pages |
70-78 |
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| Abstract |
Исследована возможность использования матрицы чувствительных элементов на гиперполусферической линзе диаметром 12 mm в тепловизоре терагерцевого диапазона частот. Получены размеры области на линзе, приемлемой для расположения матрицы, в которой шумовая температура приемника меняется в пределах 16% от средней. Диаметр этой области составил 3.3% диаметра линзы.Получены отклонения основного лепестка диаграммы направленности, которые составили ±1.25â—<a6> от направления с оптимальным положением смесителя. Флуктуационная чувствительность приемника в эксперименте составила 0.5 K на частоте 300 GHz. |
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RPLAB @ gujma @ |
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704 |
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Ozhegov, R. V.; Gorshkov, K. N.; Okunev, O. V.; Gol’tsman, G. N. |
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Superconducting hot-electron bolometer mixer as element of thermal imager matrix |
Type |
Journal Article |
| Year |
2010 |
Publication |
Tech. Phys. Lett. |
Abbreviated Journal |
Tech. Phys. Lett. |
| Volume |
36 |
Issue |
11 |
Pages |
1006-1008 |
| Keywords |
HEB mixers |
| Abstract |
The possibility of using a matrix of sensitive elements on a 12-mm-diameter hyperhemispherical lens in a thermal imager operating in the terahertz range has been studied. Dimensions of a lens region acceptable for arrangement of the matrix, in which the receiver noise temperature varies within 16% of the mean value, are determined to be 3.3% of the lens diameter. Deviations of the main lobe of the directivity pattern are evaluated, which amount to ±1.25° relative to the direction toward the optimum position of a mixer. The fluctuation sensitivity of the receiver measured in experiment is 0.5 K at a frequency of 300 GHz. |
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1063-7850 |
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1390 |
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Zhong, Tian; Hu, Xiaolong; Wong, Franco N. C.; Berggren, Karl K.; Roberts, Tony D.; Battle, Philip |
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High-quality fiber-optic polarization entanglement distribution at 1.3 μm telecom wavelength |
Type |
Journal Article |
| Year |
2010 |
Publication |
Optics Letters |
Abbreviated Journal |
Opt. Lett. |
| Volume |
35 |
Issue |
9 |
Pages |
1392-1394 |
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We demonstrate high-quality distribution of 1.3 μm polarization-entangled photons generated from a fiber-coupled periodically poled KTiOPO4 waveguide over 200 m fiber-optic cables. Time-multiplexed measurements with a 19% efficient superconducting nanowire single-photon detector at the remote location show a detected flux of 5.8 pairs / s at a pump power of 25 μW and an average two-photon quantum-interference visibility of 97.7% without subtraction of accidentals. |
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RPLAB @ gujma @ |
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686 |
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Churikov, Victor M.; Kopp, Victor I.; Genack, Azriel Z. |
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Chiral diffraction gratings in twisted microstructured fibers |
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Journal Article |
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2010 |
Publication |
Optics Letters |
Abbreviated Journal |
Opt. Lett. |
| Volume |
35 |
Issue |
3 |
Pages |
342-344 |
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chiral diffracion gratings, optical fiber gratings, from chiralphotonics |
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We observed dips in transmission spectra of uniformly twisted pure-silica microstructured fibers. The spectral positions of the dips and their insensitivity to the surrounding medium are consistent with Bragg diffraction from the helical structure. The reproducibility of the variation of the dip wavelength with temperature up to 1000°C makes the chiral diffraction grating suitable for high-temperature sensing. |
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853 |
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Jang, Young Rae; Yoo, Keon-Ho; Park, Seung Min |
| Title |
Rapid thermal annealing of ZnO thin films grown at room temperature |
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Journal Article |
| Year |
2010 |
Publication |
J. Vac. Sci. Technol. A |
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28 |
Issue |
2 |
Pages |
4 |
| Keywords |
Annealing |
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The authors successfully obtained high quality ZnO thin films by growing them at room temperature (RT) and postannealing by rapid thermal annealing (RTA). The thin films were grown by pulsed laser deposition on Si (100) substrates at RT, and RTA was performed under various temperatures and ambient conditions. Based on the UV emission to visible emission ratio in RT photoluminescence (PL) spectra, the optimum film was obtained at annealing temperature ~700 °C in an ambient of Ar, N2, or O2 at 0.1 Torr, while the optimum annealing temperature was above 1100 °C in the air ambient at atmospheric pressure. The morphology and structure of the films in different RTA conditions were investigated by using field emission scanning electron microscopy and grazing incidence x-ray diffraction, and were discussed in conjunction with the PL data. |
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Annealing |
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RPLAB @ gujma @ |
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692 |
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