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| Author |
Baek, Burm; Lita, Adriana E.; Verma, Varun; Nam, Sae Woo |
| Title |
Superconducting a-WxSi1–x nanowire single-photon detector with saturated internal quantum efficiency from visible to 1850 nm |
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Journal Article |
| Year |
2011 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
98 |
Issue |
25 |
Pages |
3 |
| Keywords |
SNSPD |
| Abstract |
We have developed a single-photon detector based on superconducting amorphous tungsten–silicon alloy (a-WxSi1–x) nanowire. Our device made from a uniform a-WxSi1–x nanowire covers a practical detection area (16 μm×16 μm) and shows high sensitivity featuring a plateau of the internal quantum efficiencies, i.e., efficiencies of generating an electrical pulse per absorbed photon, over a broad wavelength and bias range. This material system for superconducting nanowire detector technology could overcome the limitations of the prevalent nanowire devices based on NbN and lead to more practical, ideal single-photon detectors having high efficiency, low noise, and high count rates. |
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665 |
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Marsili, Francesco; Najafi, Faraz; Herder, Charles; Berggren, Karl K. |
| Title |
Electrothermal simulation of superconducting nanowire avalanche photodetectors |
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Journal Article |
| Year |
2011 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
98 |
Issue |
9 |
Pages |
3 |
| Keywords |
SNAP |
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We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results. |
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658 |
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Marsili, Francesco; Najafi, Faraz; Dauler, Eric; Bellei, Francesco; Hu, Xiaolong; Csete, Maria; Molnar, Richard J.; Berggren, Karl K. |
| Title |
Single-photon detectors based on ultranarrow superconducting nanowires |
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Journal Article |
| Year |
2011 |
Publication |
Nano Letters |
Abbreviated Journal |
Nano Lett. |
| Volume |
11 |
Issue |
5 |
Pages |
2048–2053 |
| Keywords |
SNSPD |
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We report efficient single-photon detection (η = 20% at 1550 nm wavelength) with ultranarrow (20 and 30 nm wide) superconducting nanowires, which were shown to be more robust to constrictions and more responsive to 1550 nm wavelength photons than standard superconducting nanowire single-photon detectors, based on 90 nm wide nanowires. We also improved our understanding of the physics of superconducting nanowire avalanche photodetectors, which we used to increase the signal-to-noise ratio of ultranarrow-nanowire detectors by a factor of 4, thus relaxing the requirements on the read-out circuitry and making the devices suitable for a broader range of applications. |
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RPLAB @ gujma @ |
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659 |
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Pernice, W.; Schuck, C.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. |
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High speed travelling wave single-photon detectors with near-unity quantum efficiency |
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Journal Article |
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2011 |
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arXiv |
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arXiv |
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1-14 |
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SPD |
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Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. Close-to-unity photon detection efficiency is essential for scalable measurement-based quantum computation, quantum key distribution, and loophole-free Bell experiments. However, imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Here we demonstrate a superconducting nanowire detector atop nanophotonic waveguides and achieve single photon detection efficiency up to 94% at telecom wavelengths. Our detectors are fully embedded in a scalable, low loss silicon photonic circuit and provide ultrashort timing jitter of 18ps at multi-GHz detection rates. Exploiting this high temporal resolution we demonstrate ballistic photon transport in silicon ring resonators. The direct implementation of such a detector with high quantum efficiency, high detection speed and low jitter time on chip overcomes a major barrier in integrated quantum photonics. |
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arXiv:1108.5299 |
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RPLAB @ gujma @ |
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661 |
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Korneev, Alexander; Korneeva, Yulia; Florya, Irina; Elezov, Michael; Manova, Nadezhda; Tarkhov, Michael; An, Pavel; Kardakova, Anna; Isupova, Anastasiya; Chulkova, Galina; Voronov, Boris |
| Title |
Recent advances in superconducting NbN single-photon detector development |
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Conference Article |
| Year |
2011 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
8072 |
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807202 (1 to 10) |
| Keywords |
SSPD |
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Superconducting single-photon detector (SSPD) is a planar nanostructure patterned from 4-nm-thick NbN film deposited on sapphire substrate. The sensitive element of the SSPD is 100-nm-wide NbN strip. The device is operated at liquid helium temperature. Absorption of a photon leads to a local suppression of superconductivity producing subnanosecond-long voltage pulse. In infrared (at 1550 nm and longer wavelengths) SSPD outperforms avalanche photodiodes in terms of detection efficiency (DE), dark counts rate, maximum counting rate and timing jitter. Efficient single-mode fibre coupling of the SSPD enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. Recently we managed to improve the SSPD performance and measured 25% detection efficiency at 1550 nm wavelength and dark counts rate of 10 s-1. We also improved photon-number resolving SSPD (PNR-SSPD) which realizes a spatial multiplexing of incident photons enabling resolving of up to 4 simultaneously absorbed photons. Another improvement is the increase of the photon absorption using a λ/4 microcavity integrated with the SSPD. And finally in our strive to increase the DE at longer wavelengths we fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm and demonstrated that in middle infrared (about 3 μm wavelength) these devices have DE several times higher compared to the traditional SSPDs. |
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