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Author Ghali, Mohsen; Ohtani1, Keita; Ohno, Yuzo; Ohno, Hideo
Title Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field Type Journal Article
Year 2012 Publication Nature Communications Abbreviated Journal (up) Nat. Comm.
Volume 3 Issue 661 Pages 6
Keywords fromIPMRAS
Abstract Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.
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Call Number RPLAB @ gujma @ Serial 769
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Author Grotz, Bernhard; Hauf, Moritz V.; Dankerl, Markus; Naydenov, Boris; Pezzagna, Sébastien; Meijer, Jan; Jelezko, Fedor; Wrachtrup, Jörg; Stutzmann, Martin; Reinhard, Friedemann; Garrido, Jose A.
Title Charge state manipulation of qubits in diamond Type Journal Article
Year 2012 Publication Nature Communications Abbreviated Journal (up) Nat. Comm.
Volume 3 Issue 729 Pages 6
Keywords fromIPMRAS
Abstract The nitrogen-vacancy (NV) centre in diamond is a promising candidate for a solid-state qubit. However, its charge state is known to be unstable, discharging from the qubit state NV- into the neutral state NV0 under various circumstances. Here we demonstrate that the charge state can be controlled by an electrolytic gate electrode. This way, single centres can be switched from an unknown non-fluorescent state into the neutral charge state NV0, and the population of an ensemble of centres can be shifted from NV0 to NV-. Numerical simulations confirm the manipulation of the charge state to be induced by the gate-controlled shift of the Fermi level at the diamond surface. This result opens the way to a dynamic control of transitions between charge states and to explore hitherto inaccessible states, such as NV+.
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Call Number RPLAB @ gujma @ Serial 770
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Author Pernice, W. H. P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X.
Title High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits Type Journal Article
Year 2012 Publication Nat. Commun. Abbreviated Journal (up) Nat. Commun.
Volume 3 Issue Pages 1325 (1 to 10)
Keywords waveguide SSPD
Abstract Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics.
Address Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA
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ISSN 2041-1723 ISBN Medium
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Notes PMID:23271658; PMCID:PMC3535416 Approved no
Call Number Serial 1375
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Author Gao, Jie; McMillan, James F.; Wong, Chee Wei
Title Nanophotonics: Remote on-chip coupling Type Journal Article
Year 2012 Publication Nature Photonics Abbreviated Journal (up) Nat. Photon.
Volume 6 Issue 1 Pages 7-8
Keywords fromIPMRAS
Abstract Scientists have demonstrated strongly coupled photon states between two distant high-Q photonic crystal cavities connected by a photonic crystal waveguide. Remote dynamic control over the coupled states could aid the development of delay lines, optical buffers and qubit operations in both classical and quantum information processing.
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Call Number RPLAB @ gujma @ Serial 779
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Author Pile, David
Title How many bits can a photon carry Type Journal Article
Year 2012 Publication Nature Photonics Abbreviated Journal (up) Nat. Photon.
Volume 6 Issue 1 Pages 14-15
Keywords fromIPMRAS
Abstract Quantum physics offers a way to enhance the amount of information a photon can carry, with potential applications in optical communication, lithography, metrology and imaging.
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Notes View from... OSA Frontiers in Optics 2011: How many bits can a photon carry? Approved no
Call Number RPLAB @ gujma @ Serial 780
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