| Records |
| Author |
Чулкова, Г. М.; Корнеев, А. А.; Смирнов, К. В.; Окунев, О. В. |
| Title |
Энергетическая релаксация в примесных металлах, двумерном электронном газе в AlGaAs-GaAs, сверхпроводниковых пленках NbN и детекторы субмиллиметрового и ик излучения на их основе |
Type |
Book Whole |
| Year |
2012 |
Publication |
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Abbreviated Journal |
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| Volume |
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Issue |
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Pages |
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| Keywords |
2DEG, AlGaAs/GaAs, NbN detectors |
| Abstract |
Монография посвящена обзору исследований влияния эффектов электронного беспорядка на электронное взаимодействие в металлах, сверхпроводниках, полупроводниках, а также в различных низкоразмерных структурах. Актуальность поднятых в монографии вопросов определяется интенсивным развитием нанотехнологий, созданием новых наноструктурированных материалов и уникальных наноэлементов для электроники и фотоники. Упругое электронное рассеяние на границах наноструктур качественно меняет взаимодействие электронов с фонолами, что, безусловно, должно учитываться при проектировании соответствующей элементной базы. Прикладная часть работы посвящена контролируемой модификации электронных процессов для оптимизации новых наносенсоров на основе электронного разогрева в сверхпроводниковых и полупроводниковых структурах. Монография предназначена для студентов старших курсов, аспирантов и начинающих следователей, работающих в области сверхпроводниковой наноэлектроники. |
| Address |
Москва |
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Thesis |
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| Publisher |
Прометей, МПГУ |
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ISBN |
978-5-4263-0118-4 |
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Notes  |
УДК: 537.311 |
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no |
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Serial |
1818 |
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| Author |
Казаков, А. Ю.; Кардакова, А. И.; Селиверстов, С. В.; Горшков, К. Н.; Дивочий, А. В.; Финкель, М. И.; Корнеев, А. А.; Вахтомин, Ю. Б. |
| Title |
Возможность применения сверхпроводниковых материалов в качестве отражающего покрытия холодного зеркала телескопа субмиллиметрового диапазона |
Type |
Journal Article |
| Year |
2012 |
Publication |
Совр. проб. науки и обр. |
Abbreviated Journal |
Совр. проб. науки и обр. |
| Volume |
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Issue |
3 |
Pages |
1-5 |
| Keywords |
radio telescope, superconducting coating |
| Abstract |
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| Language |
russian |
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Edition |
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| ISSN |
2070-7428 |
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| Notes |
УДК 520.272.2 |
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no |
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RPLAB @ sasha @ казаковвозможность |
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1030 |
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| Author |
Pile, David |
| Title |
How many bits can a photon carry |
Type |
Journal Article |
| Year |
2012 |
Publication |
Nature Photonics |
Abbreviated Journal |
Nat. Photon. |
| Volume |
6 |
Issue |
1 |
Pages |
14-15 |
| Keywords |
fromIPMRAS |
| Abstract |
Quantum physics offers a way to enhance the amount of information a photon can carry, with potential applications in optical communication, lithography, metrology and imaging. |
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| Notes |
View from... OSA Frontiers in Optics 2011: How many bits can a photon carry? |
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no |
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RPLAB @ gujma @ |
Serial |
780 |
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| Author |
Swetz, D. S.; Bennett, D. A.; Irwin, K. D.; Schmidt, D. R.; Ullom, J. N. |
| Title |
Current distribution and transition width in superconducting transition-edge sensors |
Type |
Journal Article |
| Year |
2012 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
101 |
Issue |
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Pages |
242603 |
| Keywords |
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| Abstract |
Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES design. We present a model with one free parameter that describes the evolution of the current distribution with bias. To probe the current distribution experimentally, we fabricated TES devices with different current return geometries. Devices where the current return geometry mirrors current flow within the device have sharper transitions, thus allowing for a direct test of the current-flow model.Measurements from these devices show that current meanders through a TES low in the resistivetransition but flows across the normal-metal features by 40% of the normal-state resistance. Comparison of transition sharpness between device designs reveals that self-induced magnetic fields play an important role in determining the width of the superconducting transition. |
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TES, current distribution |
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| Notes |
Recommended by Klapwijk |
Approved |
no |
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Serial |
930 |
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| Author |
Pernice, W. H. P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. |
| Title |
High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits |
Type |
Journal Article |
| Year |
2012 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
| Volume |
3 |
Issue |
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Pages |
1325 (1 to 10) |
| Keywords |
waveguide SSPD |
| Abstract |
Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics. |
| Address |
Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA |
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Edition |
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2041-1723 |
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| Notes |
PMID:23271658; PMCID:PMC3535416 |
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no |
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1375 |
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