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Author Чулкова, Г. М.; Корнеев, А. А.; Смирнов, К. В.; Окунев, О. В. url  isbn
openurl 
  Title Энергетическая релаксация в примесных металлах, двумерном электронном газе в AlGaAs-GaAs, сверхпроводниковых пленках NbN и детекторы субмиллиметрового и ик излучения на их основе Type Book Whole
  Year 2012 Publication Abbreviated Journal  
  Volume Issue Pages  
  Keywords 2DEG, AlGaAs/GaAs, NbN detectors  
  Abstract Монография посвящена обзору исследований влияния эффектов электронного беспорядка на электронное взаимодействие в металлах, сверхпроводниках, полупроводниках, а также в различных низкоразмерных структурах. Актуальность поднятых в монографии вопросов определяется интенсивным развитием нанотехнологий, созданием новых наноструктурированных материалов и уникальных наноэлементов для электроники и фотоники. Упругое электронное рассеяние на границах наноструктур качественно меняет взаимодействие электронов с фонолами, что, безусловно, должно учитываться при проектировании соответствующей элементной базы. Прикладная часть работы посвящена контролируемой модификации электронных процессов для оптимизации новых наносенсоров на основе электронного разогрева в сверхпроводниковых и полупроводниковых структурах. Монография предназначена для студентов старших курсов, аспирантов и начинающих следователей, работающих в области сверхпроводниковой наноэлектроники.  
  Address Москва  
  Corporate Author Thesis  
  Publisher Прометей, МПГУ Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN 978-5-4263-0118-4 Medium  
  Area Expedition Conference  
  Notes (down) УДК: 537.311 Approved no  
  Call Number Serial 1818  
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Author Казаков, А. Ю.; Кардакова, А. И.; Селиверстов, С. В.; Горшков, К. Н.; Дивочий, А. В.; Финкель, М. И.; Корнеев, А. А.; Вахтомин, Ю. Б. url  openurl
  Title Возможность применения сверхпроводниковых материалов в качестве отражающего покрытия холодного зеркала телескопа субмиллиметрового диапазона Type Journal Article
  Year 2012 Publication Совр. проб. науки и обр. Abbreviated Journal Совр. проб. науки и обр.  
  Volume Issue 3 Pages 1-5  
  Keywords radio telescope, superconducting coating  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2070-7428 ISBN Medium  
  Area Expedition Conference  
  Notes (down) УДК 520.272.2 Approved no  
  Call Number RPLAB @ sasha @ казаковвозможность Serial 1030  
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Author Pile, David openurl 
  Title How many bits can a photon carry Type Journal Article
  Year 2012 Publication Nature Photonics Abbreviated Journal Nat. Photon.  
  Volume 6 Issue 1 Pages 14-15  
  Keywords fromIPMRAS  
  Abstract Quantum physics offers a way to enhance the amount of information a photon can carry, with potential applications in optical communication, lithography, metrology and imaging.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
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  Area Expedition Conference  
  Notes (down) View from... OSA Frontiers in Optics 2011: How many bits can a photon carry? Approved no  
  Call Number RPLAB @ gujma @ Serial 780  
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Author Swetz, D. S.; Bennett, D. A.; Irwin, K. D.; Schmidt, D. R.; Ullom, J. N. doi  openurl
  Title Current distribution and transition width in superconducting transition-edge sensors Type Journal Article
  Year 2012 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 101 Issue Pages 242603  
  Keywords  
  Abstract Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES design. We present a model with one free parameter that describes the evolution of the current distribution with bias. To probe the current distribution experimentally, we fabricated TES devices with different current return geometries. Devices where the current return geometry mirrors current flow within the device have sharper transitions, thus allowing for a direct test of the current-flow model.Measurements from these devices show that current meanders through a TES low in the resistivetransition but flows across the normal-metal features by 40% of the normal-state resistance. Comparison of transition sharpness between device designs reveals that self-induced magnetic fields play an important role in determining the width of the superconducting transition.  
  Address TES, current distribution  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes (down) Recommended by Klapwijk Approved no  
  Call Number Serial 930  
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Author Pernice, W. H. P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. url  doi
openurl 
  Title High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits Type Journal Article
  Year 2012 Publication Nat. Commun. Abbreviated Journal Nat. Commun.  
  Volume 3 Issue Pages 1325 (1 to 10)  
  Keywords waveguide SSPD  
  Abstract Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics.  
  Address Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2041-1723 ISBN Medium  
  Area Expedition Conference  
  Notes (down) PMID:23271658; PMCID:PMC3535416 Approved no  
  Call Number Serial 1375  
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