| Records |
| Author |
Tret'yakov, I. V.; Kaurova, N. S.; Voronov, B. M.; Anfert'ev, V. A.; Revin, L. S.; Vaks, V. L.; Gol'tsman, G. N. |
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The influence of the diffusion cooling on the noise band of the superconductor NbN hot-electron bolometer operating in the terahertz range |
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Journal Article |
| Year |
2016 |
Publication |
Tech. Phys. Lett. |
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42 |
Issue |
6 |
Pages |
563-566 |
| Keywords |
HEB, noise bandwidth, conversion gain bandwidth, noise temperature, Andreev reflection |
| Abstract |
Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb â‰<aa> Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/ metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K. |
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1106 |
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Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. |
| Title |
Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers |
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Journal Article |
| Year |
2016 |
Publication |
Appl. Phys. Lett. |
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| Volume |
109 |
Issue |
13 |
Pages |
132602 |
| Keywords |
HEB mixer, contacts |
| Abstract |
We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. |
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1107 |
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Столяров, А. В. |
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Программирование. Введение в профессию. Том 1. Азы программирования |
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2016 |
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МАКС Пресс |
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programming, computer science |
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Первый том серии «Программирование: введение в профессию» включает две основные части. В первую часть книги вошли избранные сведения из истории вычислительной техники, обсуждение некоторых областей математики, непосредственно используемых программистами (таких как алгебра логики, комбинаторика, позиционные системы счисления), математических основ программирования (теория вычислимости и теория алгоритмов), принципы построения и функционирования вычислительных систем, начальные сведения о работе с командной строкой ОС Unix. Вторая часть посвящена начальным навыкам составления компьютерных программ на примере Free Pascal под ОС Unix. Материал ориентирован на изучение в будущем языка Си, так что, в частности, много внимания уделено работе с адресами и указателями, построению списков и других динамических структур данных; в то же время многие возможности Паскаля из рассмотрения исключены. Даются сведения о правилах оформления текстов программ, о тестировании и отладке. |
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Москва |
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978-5-317-05222-5 |
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1133 |
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Столяров, А. В. |
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Программирование. Введение в профессию. Том 2. Низкоуровневое программирование |
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2016 |
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МАКС Пресс |
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programming, computer science |
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Во второй том книги «Программирование: введение в профессию» вошли её третья и четвёртая части. Третья часть книги посвящена программированию на уровне машинных команд на примере ассемблера NASM. Рассматривается «юзерспейсовская» часть системы команд i386, конвенции системных вызовов Linux/i386 и FreeBSD/i386, изучается макропроцессор, раздельная трансляция и работа компоновщика, приведены сведения об арифметике с плавающей точкой. Четвёртая часть, посвящённая языку Си, включает, кроме собственно описания этого языка, также краткие сведения о библиотеке ncurses; рассказ о том, как использовать компилятор Си без его стандартной библиотеки; дополнительные сведения об инструментах сборки и отладки программ; наконец, в книге приводится краткое описание систем контроля версий CVS и git. |
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Москва |
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978-5-317-05301-7 |
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1134 |
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Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. |
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Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method |
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Conference Article |
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2016 |
Publication |
Proc. 27th Int. Symp. Space Terahertz Technol. |
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30-32 |
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NbN HEB, GaN buffer layer |
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In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination. |
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1202 |
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