| Records |
| Author |
Peltonen, J. T.; Peng, Z. H.; Korneeva, Yu. P.; Voronov, B. M.; Korneev, A. A.; Semenov, A. V.; Gol'tsman, G. N.; Tsai, J. S; Astafiev, Oleg |
| Title |
Coherent dynamics and decoherence in a superconducting weak link |
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Journal Article |
| Year |
2016 |
Publication |
Physic. Rev. B, |
Abbreviated Journal |
Physic. Rev. B, |
| Volume |
94 |
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180508 |
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RPLAB @ akorneev @ |
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1123 |
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Столяров, А. В. |
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Программирование. Введение в профессию. Том 1. Азы программирования |
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2016 |
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МАКС Пресс |
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programming, computer science |
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Первый том серии «Программирование: введение в профессию» включает две основные части. В первую часть книги вошли избранные сведения из истории вычислительной техники, обсуждение некоторых областей математики, непосредственно используемых программистами (таких как алгебра логики, комбинаторика, позиционные системы счисления), математических основ программирования (теория вычислимости и теория алгоритмов), принципы построения и функционирования вычислительных систем, начальные сведения о работе с командной строкой ОС Unix. Вторая часть посвящена начальным навыкам составления компьютерных программ на примере Free Pascal под ОС Unix. Материал ориентирован на изучение в будущем языка Си, так что, в частности, много внимания уделено работе с адресами и указателями, построению списков и других динамических структур данных; в то же время многие возможности Паскаля из рассмотрения исключены. Даются сведения о правилах оформления текстов программ, о тестировании и отладке. |
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Москва |
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978-5-317-05222-5 |
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1133 |
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Столяров, А. В. |
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Программирование. Введение в профессию. Том 2. Низкоуровневое программирование |
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2016 |
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МАКС Пресс |
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programming, computer science |
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Во второй том книги «Программирование: введение в профессию» вошли её третья и четвёртая части. Третья часть книги посвящена программированию на уровне машинных команд на примере ассемблера NASM. Рассматривается «юзерспейсовская» часть системы команд i386, конвенции системных вызовов Linux/i386 и FreeBSD/i386, изучается макропроцессор, раздельная трансляция и работа компоновщика, приведены сведения об арифметике с плавающей точкой. Четвёртая часть, посвящённая языку Си, включает, кроме собственно описания этого языка, также краткие сведения о библиотеке ncurses; рассказ о том, как использовать компилятор Си без его стандартной библиотеки; дополнительные сведения об инструментах сборки и отладки программ; наконец, в книге приводится краткое описание систем контроля версий CVS и git. |
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Москва |
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978-5-317-05301-7 |
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1134 |
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Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. |
| Title |
Relaxation of the resistive superconducting state in boron-doped diamond films |
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Journal Article |
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2016 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
93 |
Issue |
6 |
Pages |
064506 |
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boron-doped diamond films, resistive superconducting state, relaxation time |
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We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. |
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2469-9950 |
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1167 |
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Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. |
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Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method |
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Conference Article |
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2016 |
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Proc. 27th Int. Symp. Space Terahertz Technol. |
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30-32 |
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NbN HEB, GaN buffer layer |
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In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination. |
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