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| Author | Peltonen, J. T.; Peng, Z. H.; Korneeva, Yu. P.; Voronov, B. M.; Korneev, A. A.; Semenov, A. V.; Gol'tsman, G. N.; Tsai, J. S; Astafiev, Oleg | ||||
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Coherent dynamics and decoherence in a superconducting weak link | Type | Journal Article | ||
| Year | 2016 | Publication | Physic. Rev. B, | Abbreviated Journal | Physic. Rev. B, |
| Volume | 94 | Issue | Pages | 180508 | |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ akorneev @ | Serial | 1123 | ||
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| Author | Vetter, A.; Ferrari, S.; Rath, P.; Alaee, R.; Kahl, O.; Kovalyuk, V.; Diewald, S.; Goltsman, G. N.; Korneev, A.; Rockstuhl, C.; Pernice, W. H. P. | ||||
| Title |
Cavity-enhanced and ultrafast superconducting single-photon detectors | Type | Journal Article | ||
| Year | 2016 | Publication | Nano Lett. | Abbreviated Journal | Nano Lett. |
| Volume | 16 | Issue | 11 | Pages | 7085-7092 |
| Keywords | SSPD; SNSPD; multiphoton detection; nanophotonic circuit; photonic crystal cavity | ||||
| Abstract | Ultrafast single-photon detectors with high efficiency are of utmost importance for many applications in the context of integrated quantum photonic circuits. Detectors based on superconductor nanowires attached to optical waveguides are particularly appealing for this purpose. However, their speed is limited because the required high absorption efficiency necessitates long nanowires deposited on top of the waveguide. This enhances the kinetic inductance and makes the detectors slow. Here, we solve this problem by aligning the nanowire, contrary to usual choice, perpendicular to the waveguide to realize devices with a length below 1 mum. By integrating the nanowire into a photonic crystal cavity, we recover high absorption efficiency, thus enhancing the detection efficiency by more than an order of magnitude. Our cavity enhanced superconducting nanowire detectors are fully embedded in silicon nanophotonic circuits and efficiently detect single photons at telecom wavelengths. The detectors possess subnanosecond decay ( approximately 120 ps) and recovery times ( approximately 510 ps) and thus show potential for GHz count rates at low timing jitter ( approximately 32 ps). The small absorption volume allows efficient threshold multiphoton detection. | ||||
| Address | Institute of Physics, University of Munster , 48149 Munster, Germany | ||||
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| Language | English | Summary Language | Original Title | ||
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| ISSN | 1530-6984 | ISBN | Medium | ||
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| Notes | PMID:27759401 | Approved | no | ||
| Call Number | Serial | 1208 | |||
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| Author | Pyatkov, Felix; Khasminskaya, Svetlana; Fütterling, Valentin; Fechner, Randy; Słowik, Karolina; Ferrari, Simone; Kahl1, Oliver; Kovalyuk, Vadim; Rath, Patrik; Vetter, Andreas; Flavel, Benjamin S.; Hennrich, Frank; Kappes, Manfred M.; Gol’tsman, Gregory N.; Korneev, Alexander; Rockstuhl, Carsten; Krupke, Ralph; Pernice, Wolfram H. P. | ||||
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Carbon nanotubes as exceptional electrically driven on-chip light sources | Type | Miscellaneous | ||
| Year | 2016 | Publication | 2Physics | Abbreviated Journal | 2Physics |
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| Keywords | carbon nanotubes, CNT | ||||
| Abstract | Carbon nanotubes (CNTs) belong to the most exciting objects of the nanoworld. Typically, around 1 nm in diameter and several microns long, these cylindrically shaped carbon-based structures exhibit a number of exceptional mechanical, electrical and optical characteristics [1]. In particular, they are promising ultra-small light sources for the next generation of optoelectronic devices, where electrical components are interconnected with photonic circuits. Few years ago, we demonstrated that electically driven CNTs can serve as waveguide-integrated light sources [2]. Progress in the field of nanotube sorting, dielectrophoretical site-selective deposition and efficient light coupling into underlying substrate has made CNTs suitable for wafer-scale fabrication of active hybrid nanophotonic devices [2,3]. Recently we presented a nanotube-based waveguide integrated light emitters with tailored, exceptionally narrow emission-linewidths and short response times [4]. This allows conversion of electrical signals into well-defined optical signals directly within an optical waveguide, as required for future on-chip optical communication. Schematics and realization of this device is shown in Figure 1. The devices were manufactured by etching a photonic crystal waveguide into a dielectric layer following electron beam lithography. Photonic crystals are nanostructures that are also used by butterflies to give the impression of color on their wings. The same principle has been used in this study to select the color of light emitted by the CNT. The precise dimensions of the structure were numerically simulated to tailor the properties of the final device. Metallic contacts in the vicinity to the waveguide were fabricated to provide electrical access to CNT emitters. Finally, CNTs, sorted by structural and electronic properties, were deposited from a solution across the waveguide using dielectrophoresis, which is an electric-field-assisted deposition technique. |
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| ISSN | 2372-1782 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1219 | |||
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| Author | Finkel, M.; Thierschmann, H. R.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. | ||||
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Branchline and directional THz coupler based on PECVD SiNx-technology | Type | Conference Article | ||
| Year | 2016 | Publication | 41st IRMMW-THz | Abbreviated Journal | 41st IRMMW-THz |
| Volume | Issue | Pages | |||
| Keywords | microstrip, fixtures, coplanar waveguides, couplers, standards, probes, dielectrics | ||||
| Abstract | A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope. | ||||
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| ISSN | 2162-2035 | ISBN | 978-1-4673-8485-8 | Medium | |
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| Notes | Approved | no | |||
| Call Number | 7758586 | Serial | 1295 | ||
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| Author | Seliverstov, S. V.; Rusova, A. A.; Kaurova, N. S.; Voronov, B. M.; Goltsman, G. N. | ||||
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Attojoule energy resolution of direct detector based on hot electron bolometer | Type | Conference Article | ||
| Year | 2016 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 741 | Issue | Pages | 012165 (1 to 5) | |
| Keywords | NbN HEB detector | ||||
| Abstract | We characterize superconducting antenna-coupled NbN hot-electron bolometer (HEB) for direct detection of THz radiation operating at a temperature of 9.0 K. At signal frequency of 2.5 THz, the measured value of the optical noise equivalent power is 2.0×10-13 W-Hz-0.5. The estimated value of the energy resolution is about 1.5 aJ. This value was confirmed in the experiment with pulsed 1.55-μm laser employed as a radiation source. The directly measured detector energy resolution is 2 aJ. The obtained risetime of pulses from the detector is 130 ps. This value was determined by the properties of the RF line. These characteristics make our detector a device-of-choice for a number of practical applications associated with detection of short THz pulses. | ||||
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| Publisher | IOP Publishing | Place of Publication | Editor | ||
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| Notes | Approved | no | |||
| Call Number | Seliverstov_2016 | Serial | 1337 | ||
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