Records |
Author |
Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Goltsman, G. |
Title |
Integrated Bragg waveguides as an efficient optical notch filter on silicon nitride platform |
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Conference Article |
Year |
2017 |
Publication |
Proc. SPBOPEN |
Abbreviated Journal |
Proc. SPBOPEN |
Volume |
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Issue |
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Pages |
449-450 |
Keywords |
Bragg waveguides |
Abstract |
We modeled and fabricated integrated optical Bragg waveguides on a silicon nitride (Si3N4) platform. Transmission spectra of the integrated notch filter has been measured and attenuation at the desired wavelength of 1550 nm down to -43 dB was observed. |
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St. Petersburg, Russia |
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Duplicated as 1141 |
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1257 |
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Ferrari, S.; Kovalyuk, V.; Hartmann, W.; Vetter, A.; Kahl, O.; Lee, C.; Korneev, A.; Rockstuhl, C.; Gol'tsman, G.; Pernice, W. |
Title |
Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors |
Type |
Journal Article |
Year |
2017 |
Publication |
Opt. Express |
Abbreviated Journal |
Opt. Express |
Volume |
25 |
Issue |
8 |
Pages |
8739-8750 |
Keywords |
SSPD, SNSPD, photon counting; Infrared; Quantum detectors; Integrated optics; Multiphoton processes; Photon statistics |
Abstract |
We investigate how the bias current affects the hot-spot relaxation dynamics in niobium nitride. We use for this purpose a near-infrared pump-probe technique on a waveguide-integrated superconducting nanowire single-photon detector driven in the two-photon regime. We observe a strong increase in the picosecond relaxation time for higher bias currents. A minimum relaxation time of (22 +/- 1)ps is obtained when applying a bias current of 50% of the switching current at 1.7 K bath temperature. We also propose a practical approach to accurately estimate the photon detection regimes based on the reconstruction of the measured detector tomography at different bias currents and for different illumination conditions. |
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RPLAB @ kovalyuk @ |
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1118 |
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Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
Title |
High resolution THz gas spectrometer based on semiconductor and superconductor devices |
Type |
Conference Article |
Year |
2017 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
Volume |
132 |
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Pages |
02001 (1 to 2) |
Keywords |
NbN HEB mixers, detectors, THz spectroscopy |
Abstract |
The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined. |
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2100-014X |
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1328 |
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Lobanov, Y. V.; Shcherbatenko, M. L.; Semenov, A. V.; Kovalyuk, V. V.; Korneev, A. A.; Goltsman, G. N.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
Title |
Heterodyne spectroscopy with superconducting single-photon detector |
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Conference Article |
Year |
2017 |
Publication |
EPJ Web Conf. |
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EPJ Web Conf. |
Volume |
132 |
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Pages |
01005 |
Keywords |
SSPD mixer, SNSPD |
Abstract |
We demonstrate successful operation of a Superconducting Single Photon Detector (SSPD) as the core element in a heterodyne receiver. Irradiating the SSPD by both a local oscillator power and signal power simultaneously, we observed beat signal at the intermediate frequency of a few MHz. Gain bandwidth was found to coincide with the detector single pulse width, where the latter depends on the detector kinetic inductance, determined by the superconducting nanowire length. |
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2100-014X |
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1205 |
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Author |
Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. |
Title |
Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency |
Type |
Conference Article |
Year |
2017 |
Publication |
Proc. 28th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 28th Int. Symp. Space Terahertz Technol. |
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Pages |
147-148 |
Keywords |
NbN HEB mixers, GaN buffer-layer, IF bandwidth |
Abstract |
In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth. |
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1175 |
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