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Author Romanov, N. R.; Zolotov, P. I.; Vakhtomin, Y. B.; Divochiy, A. V.; Smirnov, K. V. url  doi
openurl 
  Title Electron diffusivity measurements of VN superconducting single-photon detectors Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal (up) J. Phys.: Conf. Ser.  
  Volume 1124 Issue Pages 051032  
  Keywords SSPD, SNSPD, VN  
  Abstract The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1229  
Permanent link to this record
 

 
Author Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. url  doi
openurl 
  Title Graphene-layer and graphene-nanoribbon FETs as THz detectors Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal (up) J. Phys.: Conf. Ser.  
  Volume 1124 Issue Pages 051054  
  Keywords field-effect transistor, FET, monolayer graphene, graphene nanoribbons  
  Abstract We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1300  
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Author Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. url  doi
openurl 
  Title Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal (up) J. Phys.: Conf. Ser.  
  Volume 1124 Issue Pages 051050 (1 to 5)  
  Keywords field-effect transistor, FET, carbon nanotube, CNT  
  Abstract In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1301  
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Author Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. url  doi
openurl 
  Title Towards to the development of THz detectors based on carbon nanostructures Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal (up) J. Phys.: Conf. Ser.  
  Volume 1092 Issue Pages 012039 (1 to 4)  
  Keywords CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors  
  Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1302  
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Author Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Seleznev, V.; Morozov, P.; Smirnov, K. url  doi
openurl 
  Title Superconducting single-photon detectors made of ultra-thin VN films Type Conference Article
  Year 2018 Publication KnE Energy Abbreviated Journal (up) KnE Energy  
  Volume 3 Issue 3 Pages 83-89  
  Keywords  
  Abstract We optimized technology of thin VN films deposition in order to study VN-based superconducting single-photon detectors. Investigation of the main VN film parameters showed that this material has lower resistivity compared to commonly used NbN. Fabricated from obtained films devices showed 100% intrinsic detection efficiency at 900 nm, at the temperature of 1.7 K starting with the bias current of 0.7·I  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1230  
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