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Author Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G. url  doi
openurl 
  Title Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors Type Journal Article
  Year 2018 Publication Phys. Status Solidi B Abbreviated Journal Phys. Status Solidi B  
  Volume 255 Issue 1 Pages (down) 1700227 (1 to 6)  
  Keywords carbon nanotube schottky diodes, CNT  
  Abstract Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz.  
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  ISSN 0370-1972 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1321  
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Author Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I. url  doi
openurl 
  Title Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices Type Journal Article
  Year 2018 Publication Nanotechnol. Abbreviated Journal Nanotechnol.  
  Volume 29 Issue 24 Pages (down) 245204 (1 to 8)  
  Keywords single layer graphene, graphene nanoribbons  
  Abstract We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.  
  Address Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0957-4484 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:29553479 Approved no  
  Call Number Serial 1308  
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Author Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Korneev, A. A.; Chulkova, G. M.; Goltsman, G. N. url  doi
openurl 
  Title Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films Type Journal Article
  Year 2018 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 97 Issue 18 Pages (down) 184512 (1 to 13)  
  Keywords WSi films, diffusion constant, SSPD, SNSPD  
  Abstract We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in τe−ph∼140–190 ps at TC=3.4K, supporting the results of earlier measurements by independent techniques.  
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  Series Volume Series Issue Edition  
  ISSN 2469-9950 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1305  
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Author Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. url  doi
openurl 
  Title Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors Type Journal Article
  Year 2018 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 112 Issue 14 Pages (down) 141101 (1 to 5)  
  Keywords graphene field effect transistors, FET  
  Abstract Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions.		  
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  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1309  
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Author Sidorova, M.; Semenov, A.; Hübers, H.-W.; Kuzmin, A.; Doerner, S.; Ilin, K.; Siegel, M.; Charaev, I.; Vodolazov, D. url  doi
openurl 
  Title Timing jitter in photon detection by straight superconducting nanowires: Effect of magnetic field and photon flux Type Journal Article
  Year 2018 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 98 Issue 13 Pages (down) 134504 (1 to 14)  
  Keywords SNSPD, NbN namowires  
  Abstract We studied the effects of the external magnetic field and photon flux on timing jitter in photon detection by straight superconducting NbN nanowires. At two wavelengths 800 and 1560 nm, statistical distribution in the appearance times of photon counts exhibits Gaussian shape at small times and an exponential tail at large times. The characteristic exponential time is larger for photons with smaller energy and increases with external magnetic field while variations in the Gaussian part of the distribution are less pronounced. Increasing photon flux drives the nanowire from the discrete quantum detection regime to the uniform bolometric regime that averages out fluctuations of the total number of nonequilibrium electrons created by the photon and drastically reduces jitter. The difference between standard deviations of Gaussian parts of distributions for these two regimes provides the measure for the strength of electron-number fluctuations; it increases with the photon energy. We show that the two-dimensional hot-spot detection model explains qualitatively the effect of magnetic field.  
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  ISSN 2469-9950 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1842  
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Author Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N. url  doi
openurl 
  Title Thermal properties of NbN single-photon detectors Type Journal Article
  Year 2018 Publication Phys. Rev. Applied Abbreviated Journal Phys. Rev. Applied  
  Volume 10 Issue 6 Pages (down) 064063 (1 to 8)  
  Keywords NbN SSPD, SNSPD  
  Abstract We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.  
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  Series Volume Series Issue Edition  
  ISSN 2331-7019 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1226  
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Author Korneeva, Y. P.; Vodolazov, D. Y.; Semenov, A. V.; Florya, I. N.; Simonov, N.; Baeva, E.; Korneev, A. A.; Goltsman, G. N.; Klapwijk, T. M. url  doi
openurl 
  Title Optical single-photon detection in micrometer-scale NbN bridges Type Journal Article
  Year 2018 Publication Phys. Rev. Applied Abbreviated Journal Phys. Rev. Applied  
  Volume 9 Issue 6 Pages (down) 064037 (1 to 13)  
  Keywords NbN SSPD, SNSPD  
  Abstract We demonstrate experimentally that single-photon detection can be achieved in micrometer-wide NbN bridges, with widths ranging from 0.53 to 5.15  μm and for photon wavelengths of 408 to 1550 nm. The microbridges are biased with a dc current close to the experimental critical current, which is estimated to be about 50% of the theoretically expected depairing current. These results offer an alternative to the standard superconducting single-photon detectors, based on nanometer-scale nanowires implemented in a long meandering structure. The results are consistent with improved theoretical modeling based on the theory of nonequilibrium superconductivity, including the vortex-assisted mechanism of initial dissipation.  
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  ISSN 2331-7019 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1303  
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Author Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. url  doi
openurl 
  Title Graphene-layer and graphene-nanoribbon FETs as THz detectors Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1124 Issue Pages (down) 051054  
  Keywords field-effect transistor, FET, monolayer graphene, graphene nanoribbons  
  Abstract We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1300  
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Author Prokhodtsov, A.; An, P.; Kovalyuk, V.; Zubkova, E.; Golikov, A.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. url  doi
openurl 
  Title Optimization of on-chip photonic delay lines for telecom wavelengths Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1124 Issue Pages (down) 051052  
  Keywords optical delay lines  
  Abstract In this work, we experimentally studied optical delay lines on silicon nitride platform for telecomm wavelength (1550 nm). We modeled the group delay time and fabricated spiral optical delay lines with different waveguide widths and radii as well as measured their transmission. For the half etched rib waveguides we achieved the losses in the range of 3 dB/cm.  
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  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1196  
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Author Golikov, A.; Kovalyuk, V.; An, P.; Zubkova, E.; Ferrari, S.; Pernice, W.; Korneev, A.; Goltsman, G. url  doi
openurl 
  Title Silicon nitride nanophotonic circuit for on-chip spontaneous four-wave mixing Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1124 Issue Pages (down) 051051  
  Keywords O-ring resonator  
  Abstract Here we present an integrated nanophotonic circuit for on-chip spontaneous four-wave mixing. The fabricated device includes an O-ring resonator, a Bragg noch-filter as well as a nine-channel arrayed waveguide gratings (AWG) operated in the C-band wavelength range (1550 nm). The measured optical losses of the device (-6.8 dB) as well as a high Q-factor (> 1.2×105) shows a good potential for realizing the spontaneous four-wave mixing on the silicon nitride chip.  
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  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1193  
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