| Records |
| Author |
Romanov, N. R.; Zolotov, P. I.; Vakhtomin, Y. B.; Divochiy, A. V.; Smirnov, K. V. |
| Title |
Electron diffusivity measurements of VN superconducting single-photon detectors |
Type |
Conference Article |
| Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1124 |
Issue |
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Pages |
051032 |
| Keywords |
SSPD, SNSPD, VN |
| Abstract |
The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm. |
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1742-6588 |
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1229 |
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Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
| Title |
Graphene-layer and graphene-nanoribbon FETs as THz detectors |
Type |
Conference Article |
| Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1124 |
Issue |
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Pages |
051054 |
| Keywords |
field-effect transistor, FET, monolayer graphene, graphene nanoribbons |
| Abstract |
We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. |
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1742-6588 |
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no |
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1300 |
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Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. |
| Title |
Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes |
Type |
Conference Article |
| Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1124 |
Issue |
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Pages |
051050 (1 to 5) |
| Keywords |
field-effect transistor, FET, carbon nanotube, CNT |
| Abstract |
In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response. |
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1742-6588 |
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no |
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1301 |
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Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
| Title |
Towards to the development of THz detectors based on carbon nanostructures |
Type |
Conference Article |
| Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1092 |
Issue |
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Pages |
012039 (1 to 4) |
| Keywords |
CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors |
| Abstract |
Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. |
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1742-6588 |
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no |
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1302 |
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Nikoghosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V. |
| Title |
Effect of absorption on the efficiency of THz radiation generation in a nonlinear crystal placed into a waveguide |
Type |
Journal Article |
| Year |
2018 |
Publication |
Armenian J. Phys. |
Abbreviated Journal |
Armenian J. Phys. |
| Volume |
11 |
Issue |
4 |
Pages |
257-262 |
| Keywords |
THz, waveguide, nonlinear crystal |
| Abstract |
The effect of THz radiation absorption on the efficiency of generation of coherent THz radiation in a nonlinear optical crystal placed into a metal rectangular waveguide is studied. The efficiency of the nonlinear conversion of optical laser radiation to the THz band is also a function of the phase-matching (PM) condition inside the nonlinear crystal. The method of partial filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. Phase matching was obtained by the proper choice of the thickness of the nonlinear crystal, namely the degree of partial filling of the waveguide. We have studied the THz radiation attenuation caused by the losses in both the metal walls of the waveguide and in the crystal, taking into account the dimension of the cross section of the waveguide, the degree of partial filling and its dielectric constant. |
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1829-1171 |
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no |
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1291 |
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