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Симонов, Н. О.; Флоря, И. Н.; Корнеева, Ю. П.; Корнеев, А. А.; Гольцман, Г. Н. |
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Title |
Однофотонный отклик в тонких сверхпроводящих MoNx пленках |
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Conference Article |
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2018 |
Publication |
Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт. |
Abbreviated Journal |
Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт. |
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408-409 |
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SSPD, SNSPD |
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Продемонстрирован однофотонный отклик, при токе близком к критическому, в MoNx сверхпроводящих полосках шириной 70-104 нм. MoNx детекторы, имеющие коэффициент диффузии D≈0.32 см2/с и время электрон-фононного взаимодействия ηe-ph≈300 пс, достигают квантовой эффективности QE≈20% на длине волны λ=1550 нм. Возможность реализации однофотонного детектора в данном материале, подтверждает существующую теорию вихревого механизма возникновения фотоотклика в узких сверхпроводящих полосках. |
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978-5-7262-2445-9 |
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УДК 535(06)+004(06) |
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1251 |
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Золотов, Ф. И.; Дивочий, А. В.; Вахтомин, Ю. Б.; Пентин, И. В.; Морозов, П. В.; Селезнев, В. А.; Смирнов, К. В. |
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Применение тонких сверхпроводниковых пленок нитрида ванадия для изготовления счетчиков одиночных ИК-фотонов |
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Conference Article |
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Year |
2018 |
Publication |
Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт. |
Abbreviated Journal |
Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт. |
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60-61 |
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Keywords |
VN SSPD, SNSPD |
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Получены первые результаты по применению сверхпроводниковых пленок нитрида ванадия (VN) для детекторов одиночных фотонов ИК-диапазона. Изучение сверхпроводниковых однофотонных детекторов (SSPD), изготовленных на основе ультратонких (~5 нм) пленок VN, показало возможность создания устройств с близкой к насыщению зависимостью квантовой эффективности от тока смещения детекторов в телекоммуникационном диапазоне длин волн. Также нами были исследованы кинетическая индуктивность изготовленных структур с различной длиной сверхпроводниковой полоски и времена релаксации электронов в тонких сверхпроводниковых пленках VN. |
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978-5-7262-2445-9 |
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УДК 535(06)+004(06) |
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1252 |
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Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
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Graphene-layer and graphene-nanoribbon FETs as THz detectors |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1124 |
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051054 |
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field-effect transistor, FET, monolayer graphene, graphene nanoribbons |
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We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. |
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1742-6588 |
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1300 |
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Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. |
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Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1124 |
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051050 (1 to 5) |
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field-effect transistor, FET, carbon nanotube, CNT |
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In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response. |
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1301 |
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Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
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Towards to the development of THz detectors based on carbon nanostructures |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1092 |
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012039 (1 to 4) |
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Keywords |
CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors |
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Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. |
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1302 |
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