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Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Moshkova, M.; Morozov, P.; Seleznev, V.; Smirnov, K. |
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Photon-number-resolving SSPDs with system detection efficiency over 50% at telecom range |
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2018 |
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Proc. AIP Conf. |
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1936 |
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1 |
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020019 |
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NbN PNR SSPD, SNSPD |
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We used technology of making high-efficiency superconducting single-photon detectors as a basis for improvement of photon-number-resolving devices. By adding optical cavity and using an improved NbN superconducting film, we enhanced previously reported system detection efficiency at telecom range for such detectors. Our results show that implementation of optical cavity helps to develop four-section device with quantum efficiency over 50% at 1.55 µm. Performed experimental studies of detecting multi-photon optical pulses showed irregularities over defining multi-photon through single-photon quantum efficiency. |
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doi:10.1063/1.5025457 |
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1231 |
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Симонов, Н. О.; Флоря, И. Н.; Корнеева, Ю. П.; Корнеев, А. А.; Гольцман, Г. Н. |
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Title |
Однофотонный отклик в тонких сверхпроводящих MoNx пленках |
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Conference Article |
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2018 |
Publication |
Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт. |
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Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт. |
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408-409 |
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SSPD, SNSPD |
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Продемонстрирован однофотонный отклик, при токе близком к критическому, в MoNx сверхпроводящих полосках шириной 70-104 нм. MoNx детекторы, имеющие коэффициент диффузии D≈0.32 см2/с и время электрон-фононного взаимодействия ηe-ph≈300 пс, достигают квантовой эффективности QE≈20% на длине волны λ=1550 нм. Возможность реализации однофотонного детектора в данном материале, подтверждает существующую теорию вихревого механизма возникновения фотоотклика в узких сверхпроводящих полосках. |
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978-5-7262-2445-9 |
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УДК 535(06)+004(06) |
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1251 |
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Золотов, Ф. И.; Дивочий, А. В.; Вахтомин, Ю. Б.; Пентин, И. В.; Морозов, П. В.; Селезнев, В. А.; Смирнов, К. В. |
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Применение тонких сверхпроводниковых пленок нитрида ванадия для изготовления счетчиков одиночных ИК-фотонов |
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Conference Article |
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2018 |
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Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт. |
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Сборн. науч. труд. VII международн. конф. по фотонике и информац. опт. |
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60-61 |
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VN SSPD, SNSPD |
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Получены первые результаты по применению сверхпроводниковых пленок нитрида ванадия (VN) для детекторов одиночных фотонов ИК-диапазона. Изучение сверхпроводниковых однофотонных детекторов (SSPD), изготовленных на основе ультратонких (~5 нм) пленок VN, показало возможность создания устройств с близкой к насыщению зависимостью квантовой эффективности от тока смещения детекторов в телекоммуникационном диапазоне длин волн. Также нами были исследованы кинетическая индуктивность изготовленных структур с различной длиной сверхпроводниковой полоски и времена релаксации электронов в тонких сверхпроводниковых пленках VN. |
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978-5-7262-2445-9 |
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УДК 535(06)+004(06) |
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1252 |
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Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
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Graphene-layer and graphene-nanoribbon FETs as THz detectors |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1124 |
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051054 |
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field-effect transistor, FET, monolayer graphene, graphene nanoribbons |
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We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. |
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1742-6588 |
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1300 |
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Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. |
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Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1124 |
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051050 (1 to 5) |
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field-effect transistor, FET, carbon nanotube, CNT |
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In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response. |
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1742-6588 |
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