| Records |
| Author |
Moshkova, M. A.; Divochiy, A. V.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V. |
| Title |
Characterization of topologies of superconducting photon number resolving detectors |
Type |
Conference Article |
| Year |
2019 |
Publication |
Proc. 8th Int. Conf. Photonics and Information Optics |
Abbreviated Journal |
Proc. 8th Int. Conf. Photonics and Information Optics |
| Volume |
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Issue |
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Pages |
465-466 |
| Keywords |
PNR SSPD |
Abstract  |
Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated. |
| Address |
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| Corporate Author |
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Thesis |
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| Publisher |
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Place of Publication |
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Editor |
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| Language |
Russian |
Summary Language |
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Original Title |
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| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
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ISBN |
978-5-7262-2536-4 |
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Expedition |
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Conference |
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| Notes |
http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf |
Approved |
no |
| Call Number |
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Serial |
1803 |
| Permanent link to this record |
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| Author |
Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Room temperature silicon detector for IR range coated with Ag2S quantum dots |
Type |
Conference Article |
| Year |
2019 |
Publication |
IRMMW-THz |
Abbreviated Journal |
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| Volume |
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Issue |
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Pages |
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| Keywords |
Ag2S quantum dots |
| Abstract |
A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications. |
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Place of Publication |
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Editor |
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Summary Language |
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Original Title |
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| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
2162-2035 |
ISBN |
978-1-5386-8285-2 |
Medium |
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Expedition |
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Conference |
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| Notes |
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Approved |
no |
| Call Number |
8874267 |
Serial |
1286 |
| Permanent link to this record |
