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Author Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
Title Room temperature silicon detector for IR range coated with Ag2S quantum dots Type Conference Article
Year 2019 Publication IRMMW-THz Abbreviated Journal
Volume Issue Pages
Keywords Ag2S quantum dots
Abstract (up) A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2162-2035 ISBN 978-1-5386-8285-2 Medium
Area Expedition Conference
Notes Approved no
Call Number 8874267 Serial 1286
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Author Moshkova, M. A.; Divochiy, A. V.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.
Title Characterization of topologies of superconducting photon number resolving detectors Type Conference Article
Year 2019 Publication Proc. 8th Int. Conf. Photonics and Information Optics Abbreviated Journal Proc. 8th Int. Conf. Photonics and Information Optics
Volume Issue Pages 465-466
Keywords PNR SSPD
Abstract (up) Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 978-5-7262-2536-4 Medium
Area Expedition Conference
Notes http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf Approved no
Call Number Serial 1803
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Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
Title Silicon room temperature IR detectors coated with Ag2S quantum dots Type Conference Article
Year 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO
Volume Issue Pages 369-371
Keywords silicon detector, quantum dot, IR, surface states
Abstract (up) For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 978-5-89513-451-1 Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1154
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Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
Title Room temperature silicon detector for IR range coated with Ag2S quantum dots Type Journal Article
Year 2019 Publication Phys. Status Solidi RRL Abbreviated Journal Phys. Status Solidi RRL
Volume 13 Issue 9 Pages 1900187-(1-6)
Keywords
Abstract (up) For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1862-6254 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1149
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Author Komrakova, S.; Javadzade, J.; Vorobyov, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Korneev, A.; Goltsman, G.
Title CMOS compatible nanoantenna-nanodiamond integration Type Conference Article
Year 2019 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1410 Issue Pages 012180
Keywords bull-eye antenna, hyperbolic metamaterials, NV-centers
Abstract (up) Here we demonstrate CMOS compatible method to deterministically produce nanoantenna with nanodiamonds systems on example of bull-eye antenna on top of on hyperbolic metamaterials. We study the statistics of the placement of nanodiamonds and measure the fluorescence lifetime and the second-order correlation function of NV-centers inside nanodiamonds.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1182
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