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Author Elmanova, A.; Elmanov, I.; Komrakova, S.; Golikov, A.; Javadzade, J.; Vorobyev, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A.
Title Integration of nanodiamonds with NV-centers on optical silicon nitride structures Type Conference Article
Year 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 220 Issue Pages 03013
Keywords nanodiamonds, NV-centers, Si3N4
Abstract In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1190
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Author Elezov, M.; Scherbatenko, M.; Sych, D.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A.
Title Towards the fiber-optic Kennedy quantum receiver Type Conference Article
Year 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 220 Issue Pages 03011 (1 to 2)
Keywords SSPD, SNSPD, Kennedy quantum receiver
Abstract We consider practical aspects of using standard fiber-optic elements and superconducting nanowire single-photon detectors for the development of a practical quantum receiver based on the Kennedy scheme. Our receiver allows to discriminate two phase-modulated coherent states of light at a wavelength of 1.5 microns in continuous mode with bit rate 200 Kbit/s and error rate about two times below the standard quantum limit.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1288
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Author Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N.
Title Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations Type Journal Article
Year 2019 Publication AIP Advances Abbreviated Journal AIP Advances
Volume 9 Issue 10 Pages 105220
Keywords GaAs/AlGaAs superlattice, SL, NbN HEB
Abstract Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) 2158-3226 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1274
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Author Ren, Y.; Zhang, D. X.; Zhou, K. M.; Miao, W.; Zhang, W.; Shi, S. C.; Seleznev, V.; Pentin, I.; Vakhtomin, Y.; Smirnov, K.
Title 10.6 μm heterodyne receiver based on a superconducting hot-electron bolometer mixer and a quantum cascade laser Type Journal Article
Year 2019 Publication AIP Advances Abbreviated Journal AIP Advances
Volume 9 Issue 7 Pages 075307
Keywords NbN HEB mixers, QCL, IR
Abstract We report on the development of a heterodyne receiver at mid-infrared wavelength for high-resolution spectroscopy applications. The receiver employs a superconducting NbN hot electron bolometer as a mixer and a room temperature distributed feedback quantum cascade laser operating at 10.6 μm (28.2 THz) as a local oscillator. The stabilization of the heterodyne receiver has been achieved using a feedback loop controlling the output power of the laser. Improved Allan variance times as well as a double sideband receiver noise temperature of 5000 K and a noise bandwidth of 2.8 GHz of the receiver system are demonstrated.

The work is supported in part by the National Key R&D Program of China under Grant 2018YFA0404701, by the CAS program under Grant QYZDJ-SSW-SLH043 and GJJSTD20180003, by the National Natural Science Foundation of China (NSFC) under Grant 11773083, by the “Hundred Talents Program” of the “Pioneer Initiative”, and in part by the CAS Key Lab for Radio Astronomy.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) 2158-3226 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1293
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Author Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
Title Room temperature silicon detector for IR range coated with Ag2S quantum dots Type Conference Article
Year 2019 Publication IRMMW-THz Abbreviated Journal
Volume Issue Pages
Keywords Ag2S quantum dots
Abstract A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN (up) 2162-2035 ISBN 978-1-5386-8285-2 Medium
Area Expedition Conference
Notes Approved no
Call Number 8874267 Serial 1286
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