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Author Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A.
Title (down) Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures Type Abstract
Year 2019 Publication Proc. Amorphous and Nanostructured Chalcogenides Abbreviated Journal Proc. Amorphous and Nanostructured Chalcogenides
Volume Issue Pages 47-48
Keywords optical waveguides
Abstract The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.
Address
Corporate Author Thesis
Publisher Technical University of Moldova Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Poster Approved no
Call Number Serial 1281
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Author Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G.
Title (down) Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer Type Journal Article
Year 2019 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 32 Issue 7 Pages 075003
Keywords NbN HEB mixer, GaN buffer layer, sapphire substrate
Abstract We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.
Address
Corporate Author Thesis
Publisher IOP Publishing Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Antipov_2019 Serial 1277
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Author Moshkova, M.; Divochiy, A.; Morozov, P.; Vakhtomin, Y.; Antipov, A.; Zolotov, P.; Seleznev, V.; Ahmetov, M.; Smirnov, K.
Title (down) High-performance superconducting photon-number-resolving detectors with 86% system efficiency at telecom range Type Journal Article
Year 2019 Publication J. Opt. Soc. Am. B Abbreviated Journal J. Opt. Soc. Am. B
Volume 36 Issue 3 Pages B20
Keywords NbN PNR SSPD, SNSPD
Abstract The use of improved fabrication technology, highly disordered NbN thin films, and intertwined section topology makes it possible to create high-performance photon-number-resolving superconducting single-photon detectors (PNR SSPDs) that are comparable to conventional single-element SSPDs at the telecom range. The developed four-section PNR SSPD has simultaneously an 86±3% system detection efficiency, 35 cps dark count rate, ∼2 ns dead time, and maximum 90 ps jitter. An investigation of the PNR SSPD’s detection efficiency for multiphoton events shows good uniformity across sections. As a result, such a PNR SSPD is a good candidate for retrieving the photon statistics for light sources and quantum key distribution systems.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0740-3224 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1225
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Author Polyakova, M. I.; Florya, I. N.; Semenov, A. V.; Korneev, A. A.; Goltsman, G. N.
Title (down) Extracting hot-spot correlation length from SNSPD tomography data Type Conference Article
Year 2019 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1410 Issue Pages 012166 (1 to 4)
Keywords SSPD, SNSPD, quantum detector tomography, QDT
Abstract We present data of quantum detector tomography for the samples specifically optimized for this problem. Using this method, we take results of hot-spot correlation length of 17 ± 2 nm.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1273
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Author Kuzin, A.; Kovalyuk, V.; Golikov, A.; Prokhodtsov, A.; Marakhin, A.; Ferrari, S.; Pernice, W.; Gippius, N.; Goltsman, G.
Title (down) Efficiency of focusing grating couplers versus taper length and angle Type Conference Article
Year 2019 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1410 Issue Pages 012181
Keywords focusing grating coupler
Abstract Here we experimentally studied dependence of a focusing grating coupler efficiency versus taper length and angle on silicon nitride platform. As a result, we obtained a dependence for the efficiency of a focusing grating coupler on the parameters of the taper length and angle.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1184
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