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Author Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A.
Title Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures Type (up) Abstract
Year 2019 Publication Proc. Amorphous and Nanostructured Chalcogenides Abbreviated Journal Proc. Amorphous and Nanostructured Chalcogenides
Volume Issue Pages 47-48
Keywords optical waveguides
Abstract The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm.
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Corporate Author Thesis
Publisher Technical University of Moldova Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Poster Approved no
Call Number Serial 1281
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Author Bandurin, Denis; Svintsov, Dmitry; Gayduchenko, Igor; Xu, Shuigang; Principi, Alessandro; Moskotin, Maksim; Tretyakov, Ivan; Yagodkin, Denis; Zhukov, Sergey; Taniguchi, Takashi; Watanabe, Kenji; Grigorieva, Irina; Polini, Marco; Goltsman, Gregory; Geim, Andre; Fedorov, Georgy
Title Resonant terahertz photoresponse and superlattice plasmons in graphene field-effect transistors Type (up) Abstract
Year 2019 Publication APS March Meeting Abbreviated Journal APS March Meeting
Volume Issue Pages F14.015
Keywords
Abstract Plasmons, collective oscillations of electron systems, can couple light and electric current, and thus can be used to create compact photodetectors, radiation mixers, and spectrometers. Despite the effort, it has proven challenging to implement plasmonic devices operating at THz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically-tunable plasmons. In this talk, we will demonstrate plasmon-assisted resonant detection of THz radiation by antenna-coupled graphene FETs that act as both rectifying elements and plasmonic Fabry-Perot cavities amplifying the photoresponse. We will show that by varying the plasmon velocity using gate voltage, our detectors can be tuned between multiple resonant modes, a functionality that we apply to measure plasmons' wavelength and lifetime in graphene as well as to probe collective modes in its moire minibands. Our approach offers a convenient tool for further plasmonic research that is often difficult under non-ambient conditions and promises a viable route for various THz applications. We acknowledge Leverhulme Trust, Russian Science Foundation Grants N18-72-00234 and 17-72-30036, Russian Foundation for Basic Research No. 18-57-06001 and 16-29-03402.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1290
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Author Chandrasekar, R.; Lapin, Z. J.; Nichols, A. S.; Braun, R. M.; Fountain, A. W.
Title Photonic integrated circuits for Department of Defense-relevant chemical and biological sensing applications: state-of-the-art and future outlooks Type (up) Conference Article
Year 2019 Publication Opt. Eng. Abbreviated Journal Opt. Eng.
Volume 58 Issue 02 Pages 1
Keywords photonic integrated circuits, PIC, optical waveguides, defense applications
Abstract Photonic integrated circuits (PICs), the optical counterpart of traditional electronic integrated circuits, are paving the way toward truly portable and highly accurate biochemical sensors for Department of Defense (DoD)-relevant applications. We introduce the fundamentals of PIC-based biochemical sensing and describe common PIC sensor architectures developed to-date for single-identification and spectroscopic sensor classes. We discuss DoD investments in PIC research and summarize current challenges. We also provide future research directions likely required to realize widespread application of PIC-based biochemical sensors. These research directions include materials research to optimize sensor components for multiplexed sensing; engineering improvements to enhance the practicality of PIC-based devices for field use; and the use of synthetic biology techniques to design new selective receptors for chemical and biological agents.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0091-3286 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1346
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Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
Title Silicon room temperature IR detectors coated with Ag2S quantum dots Type (up) Conference Article
Year 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO
Volume Issue Pages 369-371
Keywords silicon detector, quantum dot, IR, surface states
Abstract For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 978-5-89513-451-1 Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1154
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Author Komrakova, S.; Javadzade, J.; Vorobyov, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Korneev, A.; Goltsman, G.
Title CMOS compatible nanoantenna-nanodiamond integration Type (up) Conference Article
Year 2019 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1410 Issue Pages 012180
Keywords bull-eye antenna, hyperbolic metamaterials, NV-centers
Abstract Here we demonstrate CMOS compatible method to deterministically produce nanoantenna with nanodiamonds systems on example of bull-eye antenna on top of on hyperbolic metamaterials. We study the statistics of the placement of nanodiamonds and measure the fluorescence lifetime and the second-order correlation function of NV-centers inside nanodiamonds.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1182
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