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Chandrasekar, R.; Lapin, Z. J.; Nichols, A. S.; Braun, R. M.; Fountain, A. W. |
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Title |
Photonic integrated circuits for Department of Defense-relevant chemical and biological sensing applications: state-of-the-art and future outlooks |
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Conference Article |
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2019 |
Publication |
Opt. Eng. |
Abbreviated Journal |
Opt. Eng. |
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58 |
Issue |
02 |
Pages |
1 |
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Keywords |
photonic integrated circuits, PIC, optical waveguides, defense applications |
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Abstract |
Photonic integrated circuits (PICs), the optical counterpart of traditional electronic integrated circuits, are paving the way toward truly portable and highly accurate biochemical sensors for Department of Defense (DoD)-relevant applications. We introduce the fundamentals of PIC-based biochemical sensing and describe common PIC sensor architectures developed to-date for single-identification and spectroscopic sensor classes. We discuss DoD investments in PIC research and summarize current challenges. We also provide future research directions likely required to realize widespread application of PIC-based biochemical sensors. These research directions include materials research to optimize sensor components for multiplexed sensing; engineering improvements to enhance the practicality of PIC-based devices for field use; and the use of synthetic biology techniques to design new selective receptors for chemical and biological agents. |
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0091-3286 |
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1346 |
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Moshkova, M.; Divochiy, A.; Morozov, P.; Vakhtomin, Y.; Antipov, A.; Zolotov, P.; Seleznev, V.; Ahmetov, M.; Smirnov, K. |
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Title |
High-performance superconducting photon-number-resolving detectors with 86% system efficiency at telecom range |
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Journal Article |
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Year |
2019 |
Publication |
J. Opt. Soc. Am. B |
Abbreviated Journal |
J. Opt. Soc. Am. B |
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36 |
Issue |
3 |
Pages |
B20 |
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NbN PNR SSPD, SNSPD |
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The use of improved fabrication technology, highly disordered NbN thin films, and intertwined section topology makes it possible to create high-performance photon-number-resolving superconducting single-photon detectors (PNR SSPDs) that are comparable to conventional single-element SSPDs at the telecom range. The developed four-section PNR SSPD has simultaneously an 86±3% system detection efficiency, 35 cps dark count rate, ∼2 ns dead time, and maximum 90 ps jitter. An investigation of the PNR SSPD’s detection efficiency for multiphoton events shows good uniformity across sections. As a result, such a PNR SSPD is a good candidate for retrieving the photon statistics for light sources and quantum key distribution systems. |
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0740-3224 |
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1225 |
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Tovpeko, N. A.; Trifonov, A. V.; Semenov, A. V.; Antipov, S. V.; Kaurova, N. S.; Titova, N. A.; Goltsman, G. N. |
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Title |
Bandwidth performance of a THz normal metal TiN bolometer-mixer |
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Conference Article |
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2019 |
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Proc. 30th Int. Symp. Space Terahertz Technol. |
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Proc. 30th Int. Symp. Space Terahertz Technol. |
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102-103 |
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TiN normal metal bolometer, NMB |
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We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films. |
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1279 |
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Elmanova, A.; Elmanov, I.; Komrakova, S.; Golikov, A.; Javadzade, J.; Vorobyev, V.; Bolshedvorskii, S.; Soshenko, V.; Akimov, A.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
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Title |
Integration of nanodiamonds with NV-centers on optical silicon nitride structures |
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Conference Article |
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Year |
2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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220 |
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03013 |
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nanodiamonds, NV-centers, Si3N4 |
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In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources. |
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2100-014X |
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1190 |
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Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
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Title |
Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform |
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Conference Article |
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Year |
2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
220 |
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Pages |
03012 |
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e-beam lithography, Si3N4 |
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In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform. |
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2100-014X |
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1189 |
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