| Records |
| Author |
Kuzin, Aleksei; Elmanov, Ilia; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
| Title |
Silicon nitride focusing grating coupler for input and output light of NV-centers |
Type |
Conference Article |
| Year |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
| Volume |
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Issue |
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Pages |
349-353 |
| Keywords |
NV-centers, focusing grating coupler |
| Abstract |
Here we presented the numerical results for the calculation of focusing grating coupler efficiency in the visible wavelength range. Using the finite element method, the optimal geometric parameters, including filling factor and grating period for a central wavelength of 637 nm, were found. Obtained results allow to input/output single-photon radiation from NV-centers, and can be used for research and development of a scalable on-chip quantum optical computing. |
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| ISSN |
2724-0029 |
ISBN  |
978-88-85741-44-7 |
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Conference |
32nd European Modeling & Simulation Symposium |
| Notes |
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no |
| Call Number |
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Serial |
1841 |
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| Author |
Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
| Title |
Integrated contra-directional coupler for NV-centers photon filtering |
Type |
Conference Article |
| Year |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
| Volume |
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Issue |
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Pages |
354-360 |
| Keywords |
NV-centers, nanodiamonds, quantum photonic integrated circuits, contra-direction coupler, Bragg gratings |
| Abstract |
We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds. |
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| ISSN |
2724-0029 |
ISBN |
978-88-85741-44-7 |
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Conference |
32nd European Modeling & Simulation Symposium |
| Notes |
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no |
| Call Number |
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Serial |
1839 |
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| Author |
Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory |
| Title |
Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds |
Type |
Conference Article |
| Year |
2020 |
Publication |
Proc. 32-nd EMSS |
Abbreviated Journal |
Proc. 32-nd EMSS |
| Volume |
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Issue |
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Pages |
344-348 |
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| Abstract |
The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength. |
| Address |
NV-centers, nanodiamonds |
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Edition |
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| ISSN |
2724-0029 |
ISBN |
978-88-85741-44-7 |
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Conference |
32nd European Modeling & Simulation Symposium |
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no |
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Serial |
1840 |
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| Author |
Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector |
Type |
Journal Article |
| Year |
2020 |
Publication |
Nanomaterials (Basel) |
Abbreviated Journal |
Nanomaterials (Basel) |
| Volume |
10 |
Issue |
5 |
Pages |
1-12 |
| Keywords |
detector; quantum dots; short-wave infrared range; silicon |
| Abstract |
In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. |
| Address |
Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia |
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English |
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2079-4991 |
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| Notes |
PMID:32365694; PMCID:PMC7712218 |
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no |
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Serial |
1151 |
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| Author |
Elmanova, A.; An, P.; Kovalyuk, V.; Golikov, A.; Elmanov, I.; Goltsman, G. |
| Title |
Study of silicon nitride O-ring resonator for gas-sensing applications |
Type |
Conference Article |
| Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
Issue |
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Pages |
012124 |
| Keywords |
silicon nitride O-ring resonator, ORR |
| Abstract |
In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously. |
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Edition |
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| ISSN |
1742-6588 |
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no |
| Call Number |
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Serial |
1176 |
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