| Records |
| Author |
Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. |
| Title |
Influence of deposited material energy on superconducting properties of the WSi films |
Type |
Conference Article |
| Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
| Volume |
781 |
Issue |
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Pages |
012013 (1 to 6) |
| Keywords |
WSi SSPD, SNSPD |
| Abstract |
WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A. |
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1757-899X |
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1798 |
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| Author |
Antipov, A. V.; Seleznev, V. A.; Vakhtomin, Y. B.; Morozov, P. V.; Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Smirnov, K. |
| Title |
Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range |
Type |
Conference Article |
| Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
| Volume |
781 |
Issue |
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Pages |
012011 (1 to 5) |
| Keywords |
WSi, NbN SSPD, SNSPD |
| Abstract |
Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm. |
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1757-899X |
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1799 |
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Zhang, X.; Lita, A. E.; Smirnov, K.; Liu, H. L.; Zhu, D.; Verma, V. B.; Nam, S. W.; Schilling, A. |
| Title |
Strong suppression of the resistivity near the superconducting transition in narrow microbridges in external magnetic fields |
Type |
Journal Article |
| Year |
2020 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
101 |
Issue |
6 |
Pages |
060508 (1 to 6) |
| Keywords |
MoSi, WSi films |
| Abstract |
We have investigated a series of superconducting bridges based on homogeneous amorphous WSi and MoSi films, with bridge widths w ranging from 2 to 1000μm and film thicknesses d∼4−6 and 100 nm. Upon decreasing the bridge widths below the respective Pearl lengths, we observe in all cases distinct changes in the characteristics of the resistive transitions to superconductivity. For each of the films, the resistivity curves R(B,T) separate at a well-defined and field-dependent temperature T∗(B) with decreasing the temperature, resulting in a dramatic suppression of the resistivity and a sharpening of the transitions with decreasing bridge width w. The associated excess conductivity in all the bridges scales as 1/w, which may suggest either the presence of a highly conducting region that is dominating the electric transport, or a change in the vortex dynamics in narrow enough bridges. We argue that this effect can only be observed in materials with sufficiently weak vortex pinning. |
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2469-9950 |
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1800 |
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Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
| Title |
Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector |
Type |
Journal Article |
| Year |
2020 |
Publication |
Nanomaterials (Basel) |
Abbreviated Journal |
Nanomaterials (Basel) |
| Volume |
10 |
Issue |
5 |
Pages |
1-12 |
| Keywords |
detector; quantum dots; short-wave infrared range; silicon |
| Abstract |
In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. |
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Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia |
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English |
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2079-4991 |
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PMID:32365694; PMCID:PMC7712218 |
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1151 |
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Gorokhov, G.; Bychanok, D.; Gayduchenko, I.; Rogov, Y.; Zhukova, E.; Zhukov, S.; Kadyrov, L.; Fedorov, G.; Ivanov, E.; Kotsilkova, R.; Macutkevic, J.; Kuzhir, P. |
| Title |
THz spectroscopy as a versatile tool for filler distribution diagnostics in polymer nanocomposites |
Type |
Journal Article |
| Year |
2020 |
Publication |
Polymers (Basel) |
Abbreviated Journal |
Polymers (Basel) |
| Volume |
12 |
Issue |
12 |
Pages |
3037 (1 to 14) |
| Keywords |
THz spectroscopy; nanocomposites, percolation threshold, time-domain spectroscopy, time-domain spectrometer, TDS |
| Abstract |
Polymer composites containing nanocarbon fillers are under intensive investigation worldwide due to their remarkable electromagnetic properties distinguished not only by components as such, but the distribution and interaction of the fillers inside the polymer matrix. The theory herein reveals that a particular effect connected with the homogeneity of a composite manifests itself in the terahertz range. Transmission time-domain terahertz spectroscopy was applied to the investigation of nanocomposites obtained by co-extrusion of PLA polymer with additions of graphene nanoplatelets and multi-walled carbon nanotubes. The THz peak of permittivity's imaginary part predicted by the applied model was experimentally shown for GNP-containing composites both below and above the percolation threshold. The physical nature of the peak was explained by the impact on filler particles excluded from the percolation network due to the peculiarities of filler distribution. Terahertz spectroscopy as a versatile instrument of filler distribution diagnostics is discussed. |
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Institute of Photonics, University of Eastern Finland, Yliopistokatu 7, FI-80101 Joensuu, Finland |
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English |
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2073-4360 |
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PMID:33353036; PMCID:PMC7767186 |
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no |
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1780 |
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