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Antipov, A. V.; Seleznev, V. A.; Vakhtomin, Y. B.; Morozov, P. V.; Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Smirnov, K. |
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Title |
Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range |
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Conference Article |
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Year |
2020 |
Publication |
IOP Conf. Ser.: Mater. Sci. Eng. |
Abbreviated Journal |
IOP Conf. Ser.: Mater. Sci. Eng. |
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781 |
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012011 (1 to 5) |
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Keywords |
WSi, NbN SSPD, SNSPD |
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Abstract |
Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm. |
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1757-899X |
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1799 |
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Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G. |
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Title |
Luminescence of colloidal Ag2S/ZnS core/shell quantum dots capped with thioglycolic acid |
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Journal Article |
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Year |
2020 |
Publication |
J. Luminescence |
Abbreviated Journal |
J. Luminescence |
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220 |
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117008 (1 to 7) |
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Ag2S QD, quantum dots |
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The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA. |
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0022-2313 |
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1267 |
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Rasulova, G. K.; Pentin, I. V.; Vakhtomin, Y. B.; Smirnov, K. V.; Khabibullin, R. A.; Klimov, E. A.; Klochkov, A. N.; Goltsman, G. N. |
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Title |
Pulsed terahertz radiation from a double-barrier resonant tunneling diode biased into self-oscillation regime |
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Journal Article |
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2020 |
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J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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128 |
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22 |
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224303 (1 to 11) |
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HEB, resonant tunneling diode, RTD |
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The study of the bolometer response to terahertz (THz) radiation from a double-barrier resonant tunneling diode (RTD) biased into the negative differential conductivity region of the I–V characteristic revealed that the RTD emits two pulses in a period of intrinsic self-oscillations of current. The bolometer pulse repetition rate is a multiple of the fundamental frequency of the intrinsic self-oscillations of current. The bolometer pulses are detected at two critical points with a distance between them being half or one-third of a period of the current self-oscillations. An analysis of the current self-oscillations and the bolometer response has shown that the THz photon emission is excited when the tunneling electrons are trapped in (the first pulse) and then released from (the second pulse) miniband states. |
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0021-8979 |
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1262 |
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Author |
Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S. |
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Title |
Universal bottleneck for thermal relaxation in disordered metallic films |
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Journal Article |
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Year |
2020 |
Publication |
JETP Lett. |
Abbreviated Journal |
Jetp Lett. |
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Volume |
111 |
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2 |
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104-108 |
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Keywords |
NbN disordered metallic films, thermal relaxation |
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We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors. |
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0021-3640 |
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1164 |
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Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. |
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Title |
Electron energy relaxation in disordered superconducting NbN films |
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Journal Article |
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Year |
2020 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
102 |
Issue |
5 |
Pages |
054501 (1 to 15) |
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Keywords |
NbN SSPD, SNSPD, HEB, bandwidth, relaxation time |
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We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material. |
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2469-9950 |
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1266 |
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