Emelianov A V author Nekrasov N P author Moskotin M V author Fedorov G E author Otero N author Romero P M author Nevolin V K author Afinogenov B I author Nasibulin A G author Bobrinetskiy I I author 2021 The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications. SWCNT transistors exported from refbase (https://db.rplab.ru/refbase/show.php?record=1843), last updated on Thu, 12 Aug 2021 20:08:20 +0000 text https://onlinelibrary.wiley.com/doi/10.1002/aelm.202000872 https://onlinelibrary.wiley.com/doi/10.1002/aelm.202000872 10.1002/aelm.202000872 Emelianov_etal2021 2021 continuing periodical academic journal 7 3 2000872 2199-160X